2N4351 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N4351
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 65 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
   Package: TO-72

2N4351 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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