2N4351 Datasheet and Replacement
Type Designator: 2N4351
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
Package: TO-72
2N4351 substitution
2N4351 Datasheet (PDF)
2n4351.pdf

2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72HIGH GAIN gfs = 1000S BOTTOM VIEWABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 DMaximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4S
2n4352.pdf

P-Channel Enhancement ModeMOSFET Amplifier/SwitchCORPORATION2N4352FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low ON Resistance Low Capacitance Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V High Gain Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V P-Chann
Datasheet: 2N4221A , 2N4222A , 2N4223 , 2N4224 , 2N4338 , 2N4339 , 2N4340 , 2N4341 , EMB04N03H , 2N4352 , 2N4856A , 2N4857A , 2N4858A , 2N4856 , 2N4857 , 2N4858 , 2N4859 .
Keywords - 2N4351 MOSFET datasheet
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History: SIHFR224 | SIHFR120



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