All MOSFET. 2N4860A Datasheet


2N4860A MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N4860A

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.36 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 6 V

Maximum Drain Current |Id|: 0.02 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 4 nS

Maximum Drain-Source On-State Resistance (Rds): 40 Ohm

Package: TO-18, TO-206AA

2N4860A Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2N4860A Datasheet (PDF)

1.1. 2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf Size:82K _central


145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

4.1. 2n4856-59 2n4860-61.pdf Size:278K _motorola


 5.1. 2n4863.pdf Size:68K _central


TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.2. 2n4867-a 2n4868-a 2n4869-a.pdf Size:63K _interfet


Databook.fxp 1/14/99 12:00 PM Page B-17 01/99 B-17 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 40 V Gate Current 50 mA Continuous Device Power Dissipation 300mW Power Derating 1.7 mW/C Storage Temperature Range 65C to + 2

 5.3. 2n4864.pdf Size:130K _inchange_semiconductor


Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4864 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·High VCEO:120V (Min) APPLICATIONS ·For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector ABS

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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