2N5020 Specs and Replacement
Type Designator: 2N5020
Type of Transistor: JFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 0.0012 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
Package: TO-18
2N5020 substitution
- MOSFET ⓘ Cross-Reference Search
2N5020 datasheet
2n5020 2n5021.pdf
Databook.fxp 1/13/99 2 09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/ C Storage Temperature Range 65 C to + 200 C A... See More ⇒
2n5022 2n5023.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N4860A, 2N4861A, 2N4867, 2N4868, 2N4869, 2N4867A, 2N4868A, 2N4869A, IRF540, 2N5021, 2N5114, 2N5115, 2N5116, 2N5196, 2N5197, 2N5198, 2N5199
Keywords - 2N5020 MOSFET specs
2N5020 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: D630 | 2N4091 | 18P10D | IPD49CN10NG | PN4119 | 2N3687 | 3SK291
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