2N5020 Datasheet and Replacement
Type Designator: 2N5020
Type of Transistor: JFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 0.0012 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Package: TO-18
2N5020 substitution
2N5020 Datasheet (PDF)
2n5020 2n5021.pdf
Databook.fxp 1/13/99 2:09 PM Page B-18B-18 01/992N5020, 2N5021P-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Analog SwitchesReverse Gate Source & Reverse Gate Drain Voltage 50 VContinuous Forward Gate Current 50 mAContinuous Device Power Dissipation 500 mWPower Derating 4 mW/CStorage Temperature Range 65C to + 200CA
2n5022 2n5023.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
Datasheet: 2N4860A , 2N4861A , 2N4867 , 2N4868 , 2N4869 , 2N4867A , 2N4868A , 2N4869A , IRF540N , 2N5021 , 2N5114 , 2N5115 , 2N5116 , 2N5196 , 2N5197 , 2N5198 , 2N5199 .
History: AOW66613 | APT6029BLL | AM2394NE | CEU06N7 | STE139N65M5 | APT38N60BC6 | 2SK2518-01MR
Keywords - 2N5020 MOSFET datasheet
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History: AOW66613 | APT6029BLL | AM2394NE | CEU06N7 | STE139N65M5 | APT38N60BC6 | 2SK2518-01MR
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