2N5021 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N5021
Type of Transistor: JFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.5 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 2.5 V
Maximum Drain Current |Id|: 0.0035 A
Maximum Junction Temperature (Tj): 200 °C
Package: TO-18
2N5021 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N5021 Datasheet (PDF)
1.1. 2n5020 2n5021.pdf 
Size:89K _interfet
Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/C Storage Temperature Range 65C to + 200C At 25C free
5.1. 2n5022 2n5023.pdf Size:73K _central
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