2N5432 Datasheet. Specs and Replacement
Type Designator: 2N5432 📄📄
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-52 TO-206AC
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2N5432 datasheet
2n5432 2n5433 2n5434.pdf
2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 4 to 10 5 10 2.5 2N5433 3 to 9 7 10 2.5 2N5434 1 to 4 10 10 2.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2N5432 ... See More ⇒
2n5430x.pdf
2N5430X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec... See More ⇒
2n5430.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE... See More ⇒
Detailed specifications: 2N5196, 2N5197, 2N5198, 2N5199, 2N5245, 2N5246, 2N5397, 2N5398, IRF3710, 2N5433, 2N5434, 2N5452, 2N5453, 2N5454, 2N5457, 2N5458, 2N5459
Keywords - 2N5432 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
History: 2N5462 | 2N5515
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