2N5517 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N5517
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 0.0075 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Package: TO-71

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