2N5518 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N5518
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 0.0075 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Package: TO-71

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SWT45N60K2