All MOSFET. 2N5566 Datasheet

 

2N5566 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N5566
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: TO-71

 2N5566 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N5566 Datasheet (PDF)

 ..1. Size:89K  vishay
 2n5564 2n5565 2n5566.pdf

2N5566 2N5566

2N5564/5565/5566Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV)2N5564 -0.5 to -3 -40 7.5 -3 52N5565 -0.5 to -3 -40 7.5 -3 102N5566 -0.5 to -3 -40 7.5 -3 20FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF6645

 

 
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