All MOSFET. 2N5949 Datasheet

 

2N5949 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5949

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.36 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 6 V

Maximum Drain Current |Id|: 0.018 A

Maximum Junction Temperature (Tj): 150 °C

Package: TO-92-18R

2N5949 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N5949 Datasheet (PDF)

1.1. 2n5949 2n5950 2n5951 2n5952 2n5953.pdf Size:71K _central

2N5949

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.1. 2n5945.pdf Size:13K _advanced-semi

2N5949

2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5945 is Designed for FM Land Mobile Applications in the PACKAGE STYLE .280 4L STUD 400 to 960 MHz. A 45 FEATURES: C Common Emitter B E E PG = 9.0 dB at 2.0 W/470 MHz B Omnigold Metalization System C D J E I MAXIMUM RATINGS F G IC 0.8 A H #8-32 UNC K VCBO 36 V MINIMUM MAXIMUM DIM

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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