2N5949 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N5949
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.36 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 6 V
Maximum Drain Current |Id|: 0.018 A
Maximum Junction Temperature (Tj): 150 °C
Package: TO-92-18R
2N5949 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N5949 Datasheet (PDF)
1.1. 2n5949 2n5950 2n5951 2n5952 2n5953.pdf 
Size:71K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
5.1. 2n5945.pdf Size:13K _advanced-semi
2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5945 is Designed for FM Land Mobile Applications in the PACKAGE STYLE .280 4L STUD 400 to 960 MHz. A 45 FEATURES: C Common Emitter B E E PG = 9.0 dB at 2.0 W/470 MHz B Omnigold Metalization System C D J E I MAXIMUM RATINGS F G IC 0.8 A H #8-32 UNC K VCBO 36 V MINIMUM MAXIMUM DIM
Datasheet: 2N5904 , 2N5905 , 2N5906 , 2N5907 , 2N5908 , 2N5909 , 2N5911 , 2N5912 , BF245C , 2N5950 , 2N5951 , 2N5952 , 2N5953 , 2N6449 , 2N6450 , 2N6451 , 2N6452 .
