2N6449 Specs and Replacement
Type Designator: 2N6449
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.01 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
Package: TO-39
2N6449 substitution
- MOSFET ⓘ Cross-Reference Search
2N6449 datasheet
2n6449 2n6450.pdf
Databook.fxp 1/13/99 2 09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C High Voltage 2N6449 2N6450 Reverse Gate Source Voltage 300 V 200 V Reverse Gate Drain Voltage 300 V 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derati... See More ⇒
Detailed specifications: 2N5909 , 2N5911 , 2N5912 , 2N5949 , 2N5950 , 2N5951 , 2N5952 , 2N5953 , RFP50N06 , 2N6450 , 2N6451 , 2N6452 , 2N6453 , 2N6454 , 2N6804 , 2N6806 , 2N7091 .
History: WMP10N105C2 | IRLR7821C | APQ39SN04AA | CS2N60 | WMM10N65EM | APQ39SN04AB
Keywords - 2N6449 MOSFET specs
2N6449 cross reference
2N6449 equivalent finder
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2N6449 substitution
2N6449 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WMP10N105C2 | IRLR7821C | APQ39SN04AA | CS2N60 | WMM10N65EM | APQ39SN04AB
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