2N6449 Datasheet and Replacement
Type Designator: 2N6449
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id|ⓘ - Maximum Drain Current: 0.01 A
Tjⓘ - Maximum Junction Temperature: 200 °C
Package: TO-39
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2N6449 Datasheet (PDF)
2n6449 2n6450.pdf
Databook.fxp 1/13/99 2:09 PM Page B-24B-24 01/992N6449, 2N6450N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C High Voltage2N6449 2N6450Reverse Gate Source Voltage 300 V 200 VReverse Gate Drain Voltage 300 V 200 VContinuous Forward Gate Current 10 mA 10 mAContinuous Device Power Dissipation 800 mW 800 mWPower Derati
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NCEP0178D | IRLU8726PBF | STD4NK60ZT4 | HX3401A | AP30N30W | 2SK2845 | IPB60R600C6
Keywords - 2N6449 MOSFET datasheet
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History: NCEP0178D | IRLU8726PBF | STD4NK60ZT4 | HX3401A | AP30N30W | 2SK2845 | IPB60R600C6
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