2N6449 Datasheet and Replacement
Type Designator: 2N6449
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.01 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Package: TO-39
2N6449 substitution
2N6449 Datasheet (PDF)
2n6449 2n6450.pdf
Databook.fxp 1/13/99 2:09 PM Page B-24B-24 01/992N6449, 2N6450N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C High Voltage2N6449 2N6450Reverse Gate Source Voltage 300 V 200 VReverse Gate Drain Voltage 300 V 200 VContinuous Forward Gate Current 10 mA 10 mAContinuous Device Power Dissipation 800 mW 800 mWPower Derati
Datasheet: 2N5909 , 2N5911 , 2N5912 , 2N5949 , 2N5950 , 2N5951 , 2N5952 , 2N5953 , SKD502T , 2N6450 , 2N6451 , 2N6452 , 2N6453 , 2N6454 , 2N6804 , 2N6806 , 2N7091 .
History: IPD800N06NG
Keywords - 2N6449 MOSFET datasheet
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History: IPD800N06NG
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