FRM430D Specs and Replacement

Type Designator: FRM430D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO204AA

FRM430D substitution

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FRM430D datasheet

 8.1. Size:47K  intersil
 frm430.pdf pdf_icon

FRM430D

FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 3A, 500V, RDS(on) = 2.50 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

Detailed specifications: FRM234H, FRM234R, FRM240D, FRM240H, FRM240R, FRM244D, FRM244H, FRM244R, IRF3710, FRM430H, FRM430R, FRM440D, FRM440H, FRM440R, FRM450D, FRM450H, FRM450R

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