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IPS0151S Specs and Replacement

Type Designator: IPS0151S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

|Vds|ⓘ - Maximum Drain-Source Voltage: 47 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: D2PAK

IPS0151S substitution

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IPS0151S datasheet

 7.1. Size:163K  international rectifier
 ips0151.pdf pdf_icon

IPS0151S

Data Sheet No.PD60144-K ( ) IPS0151 S FULLY PROTECTED POWER MOSFET SWITCH Features Product Summary Over temperature shutdown Over current shutdown Rds(on) 25m (max) Active clamp Low current & logic level input E.S.D protection V clamp 50V Ishutdown 35A Description Ton/Toff 1.5 s The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs t... See More ⇒

Detailed specifications: BST100, BST70A, BUZ326, FJN598J, FJX597JB, FS10KM-10, FS3KM-10, PS0151, IRF9640, ISL9N303AP3, ISL9N303AS3ST, ISL9N303AS3, J105, J106, J107, JFTJ105, J174

Keywords - IPS0151S MOSFET specs

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