All MOSFET. FRM430H Datasheet

 

FRM430H Datasheet and Replacement


   Type Designator: FRM430H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 66 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO204AA
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FRM430H Datasheet (PDF)

 8.1. Size:47K  intersil
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FRM430H

FRM430D, FRM430R,FRM430H3A, 500V, 2.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 3A, 500V, RDS(on) = 2.50TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

Datasheet: FRM234R , FRM240D , FRM240H , FRM240R , FRM244D , FRM244H , FRM244R , FRM430D , IRFB4227 , FRM430R , FRM440D , FRM440H , FRM440R , FRM450D , FRM450H , FRM450R , FRM9130D .

History: SVFP7N65CMJ | 2SK2402 | KNE6303A | IPD65R600C6 | IXFH110N10P | RSE002P03TL | TPC8001

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