All MOSFET. KSK30 Datasheet

 

KSK30 Datasheet and Replacement


   Type Designator: KSK30
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 0.0065 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Package: TO-92
 

 KSK30 substitution

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KSK30 Datasheet (PDF)

 ..1. Size:78K  fairchild semi
 ksk30.pdf pdf_icon

KSK30

KSK30Low Noise PRE-AMP. Use High Input Impedance: IGSS=1nA (MAX) Low Noise: NF=0.5dB (TYP) High Voltage: VGDS= -50VTO-9211. Source 2. Gate 3. DrainSilicon N-channel Junction FetAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVGDS Gate-Drain Voltage -50 VIG Gate-Current 10 mAPD Collector Dissipation 100 mWTJ Junction Tem

Datasheet: J210 , MMBFJ210 , MMBFJ211 , MMBFJ212 , J270 , J271 , J304 , J305 , IRFP260N , KSK595H , KSK596 , LS4117 , LS4118 , LS4119 , MMBF4091 , MMBF4092 , MMBF4093 .

History: KSK595H | CS4N65 | MMBF5458 | RF1S45N06LESM | 2N7002WT1 | FDBL0120N40 | FCU850N80Z

Keywords - KSK30 MOSFET datasheet

 KSK30 cross reference
 KSK30 equivalent finder
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