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KSK30 Specs and Replacement

Type Designator: KSK30

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 0.0065 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Package: TO-92

KSK30 substitution

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KSK30 datasheet

 ..1. Size:78K  fairchild semi
 ksk30.pdf pdf_icon

KSK30

KSK30 Low Noise PRE-AMP. Use High Input Impedance IGSS=1nA (MAX) Low Noise NF=0.5dB (TYP) High Voltage VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VGDS Gate-Drain Voltage -50 V IG Gate-Current 10 mA PD Collector Dissipation 100 mW TJ Junction Tem... See More ⇒

Detailed specifications: J210, MMBFJ210, MMBFJ211, MMBFJ212, J270, J271, J304, J305, IRF640N, KSK595H, KSK596, LS4117, LS4118, LS4119, MMBF4091, MMBF4092, MMBF4093

Keywords - KSK30 MOSFET specs

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