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TIS75 Spec and Replacement


   Type Designator: TIS75
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.08 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 60 Ohm
   Package: TO-92

 TIS75 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TIS75 Specs

 ..1. Size:27K  fairchild semi
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TIS75

TIS75 N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 54. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward ... See More ⇒

Detailed specifications: PN4302 , PN4303 , PN4861 , PN5432 , PN5433 , PN5434 , TIS73 , TIS74 , AO3407 , U1898 , J308 , SST308 , SST309 , SST310 , U309 , U310 , VN0610L .

Keywords - TIS75 MOSFET specs

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