All MOSFET. TIS75 Datasheet

 

TIS75 Datasheet and Replacement


   Type Designator: TIS75
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.08 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 60 Ohm
   Package: TO-92
 

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TIS75 Datasheet (PDF)

 ..1. Size:27K  fairchild semi
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TIS75

TIS75N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 54.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward

Datasheet: PN4302 , PN4303 , PN4861 , PN5432 , PN5433 , PN5434 , TIS73 , TIS74 , 7N60 , U1898 , J308 , SST308 , SST309 , SST310 , U309 , U310 , VN0610L .

History: CS10N80F | CS2N60A4H

Keywords - TIS75 MOSFET datasheet

 TIS75 cross reference
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