TIS75 MOSFET. Datasheet pdf. Equivalent
Type Designator: TIS75
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.8 V
|Id|ⓘ - Maximum Drain Current: 0.08 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 60 Ohm
Package: TO-92
TIS75 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TIS75 Datasheet (PDF)
tis75.pdf
TIS75N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 54.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SSM9567GM
History: SSM9567GM
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