All MOSFET. TIS75 Datasheet

 

TIS75 Datasheet and Replacement


   Type Designator: TIS75
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 0.08 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 60 Ohm
   Package: TO-92
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TIS75 Datasheet (PDF)

 ..1. Size:27K  fairchild semi
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TIS75

TIS75N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 54.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RCD075N19 | TK15J60T | RD3L150SN | RDN150N20

Keywords - TIS75 MOSFET datasheet

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