SMN18T50FD Specs and Replacement
Type Designator: SMN18T50FD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 375 nS
Cossⓘ - Output Capacitance: 355 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO-220F
SMN18T50FD substitution
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SMN18T50FD datasheet
smn18t50fd.pdf
SMN18T50FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage BV = 500V DSS Low gate charge Q =65nC (Typ.) g Low drain-source On resistance R =0.21 (Typ.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN18T50FD SMN18T50 TO... See More ⇒
Detailed specifications: SMN0250F, SMN03T80F, SMN03T80IS, SMN0470F, SMN04L20D, SMN04L20IS, SMN0665F, SMN09L20D, IRF1407, SMNY2Z30, STK0170, STK0380D, STK0380F, STK730F, STK830D, STK830F, STK830P
Keywords - SMN18T50FD MOSFET specs
SMN18T50FD cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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