SMNY2Z30 Datasheet and Replacement
Type Designator: SMNY2Z30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO-92
SMNY2Z30 substitution
SMNY2Z30 Datasheet (PDF)
smny2z30.pdf

SMNY2Z30Advanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATION Features High voltage: BVDDS=300V (Min.) Low gate charge: Qg=2.9nC (Typ.) Low drain-source On resistance: RDS(on)=8 (Max.) Built-in protection zener diode RoHS compliant device Ordering Information G D S Part Number Marking Package TO-92 SMNY2Z30 SMNY2Z30 TO-92 Marking Informatio
Datasheet: SMN03T80F , SMN03T80IS , SMN0470F , SMN04L20D , SMN04L20IS , SMN0665F , SMN09L20D , SMN18T50FD , 5N65 , STK0170 , STK0380D , STK0380F , STK730F , STK830D , STK830F , STK830P , SUN0260D .
History: APT5040KFLLG
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History: APT5040KFLLG



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