All MOSFET. SMNY2Z30 Datasheet

 

SMNY2Z30 Datasheet and Replacement


   Type Designator: SMNY2Z30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.9 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-92
 

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SMNY2Z30 Datasheet (PDF)

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SMNY2Z30

SMNY2Z30Advanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATION Features High voltage: BVDDS=300V (Min.) Low gate charge: Qg=2.9nC (Typ.) Low drain-source On resistance: RDS(on)=8 (Max.) Built-in protection zener diode RoHS compliant device Ordering Information G D S Part Number Marking Package TO-92 SMNY2Z30 SMNY2Z30 TO-92 Marking Informatio

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