SMNY2Z30 Specs and Replacement
Type Designator: SMNY2Z30
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO-92
SMNY2Z30 substitution
- MOSFET ⓘ Cross-Reference Search
SMNY2Z30 datasheet
smny2z30.pdf
SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features High voltage BVDDS=300V (Min.) Low gate charge Qg=2.9nC (Typ.) Low drain-source On resistance RDS(on)=8 (Max.) Built-in protection zener diode RoHS compliant device Ordering Information G D S Part Number Marking Package TO-92 SMNY2Z30 SMNY2Z30 TO-92 Marking Informatio... See More ⇒
Detailed specifications: SMN03T80F, SMN03T80IS, SMN0470F, SMN04L20D, SMN04L20IS, SMN0665F, SMN09L20D, SMN18T50FD, 2SK3568, STK0170, STK0380D, STK0380F, STK730F, STK830D, STK830F, STK830P, SUN0260D
Keywords - SMNY2Z30 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI7900AEDN | IPI180N10N3
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