All MOSFET. STK830D Datasheet

 

STK830D Datasheet and Replacement


   Type Designator: STK830D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-252
 

 STK830D substitution

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STK830D Datasheet (PDF)

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STK830D

STK830DSemiconductor Semiconductor Advanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS PIN Connection Features D High Voltage: BVDSS=500V(Min.) Low Crss : Crss=10pF(Typ.) D Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5(Max.) G Ordering Information G D S S Type No. Marking Package Code TO-252 STK830D STK830 TO-252A

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STK830D

STK830FSemiconductor Semiconductor Power MOSFETSWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5(Max.) Ordering Information Type NO. Marking Package Code STK830F STK830 TO-220F-3LOutline Dimensions unit : mm 3.05~3.35 9.80~10.20 2.

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STK830D

STK830PSemiconductor Semiconductor Advanced Power MOSFETSWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5(Max.) Ordering Information Type NO. Marking Package Code STK830P STK830 TO-220AB-3LOutline Dimensions unit : mm 3.90 Max. 1.17~1

Datasheet: SMN0665F , SMN09L20D , SMN18T50FD , SMNY2Z30 , STK0170 , STK0380D , STK0380F , STK730F , AO3407 , STK830F , STK830P , SUN0260D , SUN0260F , SUN0460D , SUN0460F , SUN0460I2 , SUN0465F .

History: RUM002N02T2L

Keywords - STK830D MOSFET datasheet

 STK830D cross reference
 STK830D equivalent finder
 STK830D lookup
 STK830D substitution
 STK830D replacement

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