STK830D
MOSFET. Datasheet pdf. Equivalent
Type Designator: STK830D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 46
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO-252
STK830D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STK830D
Datasheet (PDF)
..1. Size:465K auk
stk830d.pdf 
STK830DSemiconductor Semiconductor Advanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS PIN Connection Features D High Voltage: BVDSS=500V(Min.) Low Crss : Crss=10pF(Typ.) D Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5(Max.) G Ordering Information G D S S Type No. Marking Package Code TO-252 STK830D STK830 TO-252A
8.1. Size:412K auk
stk830f.pdf
STK830FSemiconductor Semiconductor Power MOSFETSWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5(Max.) Ordering Information Type NO. Marking Package Code STK830F STK830 TO-220F-3LOutline Dimensions unit : mm 3.05~3.35 9.80~10.20 2.
8.2. Size:398K auk
stk830p.pdf
STK830PSemiconductor Semiconductor Advanced Power MOSFETSWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5(Max.) Ordering Information Type NO. Marking Package Code STK830P STK830 TO-220AB-3LOutline Dimensions unit : mm 3.90 Max. 1.17~1
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