SNN0310Q Specs and Replacement
Type Designator: SNN0310Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT-223
SNN0310Q substitution
- MOSFET ⓘ Cross-Reference Search
SNN0310Q datasheet
snn0310q.pdf
SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features Max. RDS(ON) = 150m at VGS = 10V, ID = 2A Low gate charge Qg=18nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-22... See More ⇒
Detailed specifications: SUN0765I2, SUN1060F, SUN1060I2, 2N7002B, 2N7002KU, SNN01Z10D, SNN01Z10Q, SNN01Z60Q, K2611, SNN0630Q, SNN2515D, SNN3515D, SNN4010D, SNN5010D, STK0602U, STK5006P, STK7002
Keywords - SNN0310Q MOSFET specs
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History: FDP8870F085 | STK900
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