SNN2515D Specs and Replacement
Type Designator: SNN2515D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 247 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-252
SNN2515D substitution
- MOSFET ⓘ Cross-Reference Search
SNN2515D datasheet
snn2515d.pdf
SNN2515D N-Channel Enhancement Mode MOSFET Features VDSS = 150V, ID = 25A Low drain-source On resistance D RDS(on) = 55m (Typ.) @ VGS = 10V, ID = 12A RDS(on) = 60m (Typ.) @ VGS = 5V, ID = 10A High power and current handing capability Lead Free and Green devices available (RoHS Compliant) G S Applications Power Management in TV Converter ... See More ⇒
Detailed specifications: SUN1060I2, 2N7002B, 2N7002KU, SNN01Z10D, SNN01Z10Q, SNN01Z60Q, SNN0310Q, SNN0630Q, RU7088R, SNN3515D, SNN4010D, SNN5010D, STK0602U, STK5006P, STK7002, STK7006P, STJ001SF
Keywords - SNN2515D MOSFET specs
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