SNN4010D Datasheet and Replacement
Type Designator: SNN4010D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13.2 nS
Cossⓘ - Output Capacitance: 144 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-252
SNN4010D substitution
SNN4010D Datasheet (PDF)
snn4010d.pdf
SNN4010DN-Ch Trench MOSFETPower Switching Application Features Drain-source breakdown voltage: BVDSS=100V Low gate charge device D Low drain-source On resistance: RDS(on)=25m (Typ.) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S Part Number Marking Package TO-252 SNN4010D SNN4010 TO-252 Marking
Datasheet: 2N7002KU , SNN01Z10D , SNN01Z10Q , SNN01Z60Q , SNN0310Q , SNN0630Q , SNN2515D , SNN3515D , AOD4184A , SNN5010D , STK0602U , STK5006P , STK7002 , STK7006P , STJ001SF , STJ004SF , STJ009 .
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