SNN4010D Specs and Replacement
Type Designator: SNN4010D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.2 nS
Cossⓘ - Output Capacitance: 144 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-252
SNN4010D substitution
- MOSFET ⓘ Cross-Reference Search
SNN4010D datasheet
snn4010d.pdf
SNN4010D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage BVDSS=100V Low gate charge device D Low drain-source On resistance RDS(on)=25m (Typ.) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S Part Number Marking Package TO-252 SNN4010D SNN4010 TO-252 Marking... See More ⇒
Detailed specifications: 2N7002KU, SNN01Z10D, SNN01Z10Q, SNN01Z60Q, SNN0310Q, SNN0630Q, SNN2515D, SNN3515D, AOD4184A, SNN5010D, STK0602U, STK5006P, STK7002, STK7006P, STJ001SF, STJ004SF, STJ009
Keywords - SNN4010D MOSFET specs
SNN4010D cross reference
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History: STK7006P | SWF15N65D | STK7002 | BRFL7N65 | FS22SM-9 | G01N20R | FCB070N65S3
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