All MOSFET. SNN4010D Datasheet

 

SNN4010D Datasheet and Replacement


   Type Designator: SNN4010D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-252
 

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SNN4010D Datasheet (PDF)

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SNN4010D

SNN4010DN-Ch Trench MOSFETPower Switching Application Features Drain-source breakdown voltage: BVDSS=100V Low gate charge device D Low drain-source On resistance: RDS(on)=25m (Typ.) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S Part Number Marking Package TO-252 SNN4010D SNN4010 TO-252 Marking

Datasheet: 2N7002KU , SNN01Z10D , SNN01Z10Q , SNN01Z60Q , SNN0310Q , SNN0630Q , SNN2515D , SNN3515D , HY1906P , SNN5010D , STK0602U , STK5006P , STK7002 , STK7006P , STJ001SF , STJ004SF , STJ009 .

Keywords - SNN4010D MOSFET datasheet

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