FRM9250R Specs and Replacement
Type Designator: FRM9250R
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO204AA
FRM9250R substitution
- MOSFET ⓘ Cross-Reference Search
FRM9250R datasheet
frm9250.pdf
FRM9250D, FRM9250R, FRM9250H 16A, -200V, 0.300 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 16A, -200V, RDS(on) = 0.300 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒
frm9240.pdf
FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 7A, -200V, RDS(on) = 0.720 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(S... See More ⇒
frm9230.pdf
FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 4A, -200V, RDS(on) = 1.30 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)... See More ⇒
Detailed specifications: FRM9230D, FRM9230H, FRM9230R, FRM9240D, FRM9240H, FRM9240R, FRM9250D, FRM9250H, SKD502T, FRS130D, FRS130H, FRS130R, FRS140D, FRS140H, FRS140R, FRS230D, FRS230H
Keywords - FRM9250R MOSFET specs
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