All MOSFET. 1N90 Datasheet

 

1N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 22 pF

Maximum Drain-Source On-State Resistance (Rds): 10.3 Ohm

Package: TO-220_TO-262_TO-251_TO-252_TO-220F_TO-220F1

1N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N90 Datasheet (PDF)

1.1. stb21n90k5.pdf Size:992K _upd

1N90
1N90

STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features TAB Order codes VDSS RDS(on)max ID PW 3 3 1 STB21N90K5 250 W 2 1 D2PAK TO-220FP STF21N90K5 40 W 900 V < 0.299 Ω 18.5 A TAB STP21N90K5 250 W STW21N90K5 ■ TO-

1.2. fmh11n90e.pdf Size:473K _upd-mosfet

1N90
1N90

FMH11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0±0.5V)

 1.3. ssh11n90.pdf Size:261K _upd-mosfet

1N90
1N90



1.4. tman11n90z.pdf Size:512K _upd-mosfet

1N90
1N90

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 900V 11A <0.95W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN11N90Z TO-3PN TMAN11N90Z RoHS Absolute Maximum Ratings Parameter Symbol TMAN11N90Z Unit Drain-Source Voltage VDS 900 V Gate-Source Voltage VG

 1.5. fqa11n90.pdf Size:827K _upd-mosfet

1N90
1N90

September 2007 ® QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • 11.4A, 900V, RDS(on) = 0.96Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 72 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 30pF) This advanced technology has been especi

1.6. fmr11n90e.pdf Size:461K _upd-mosfet

1N90
1N90

FMR11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0±0.5V) H

1.7. fmv11n90e.pdf Size:455K _upd-mosfet

1N90
1N90

FMV11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0±0.

1.8. tman11n90az.pdf Size:508K _upd-mosfet

1N90
1N90

TMAN11N90AZ N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 11A < 0.9W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMAN11N90AZ TO-3PN TMAN11N90AZ RoHS Absolute Maximum Ratings Parameter Symbol TMAN11N90AZ Unit Drain-Source Voltage VD

1.9. fqa11n90c.pdf Size:706K _upd-mosfet

1N90
1N90

FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching

1.10. msw11n90.pdf Size:695K _upd-mosfet

1N90
1N90

MSW11N90 900V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • RDS(on) (Max 1.1 Ω )@VGS=10V • Gate Charge (Typical 70nC) • Improved dv/dt Capability, High Ruggedness

1.11. hfh11n90.pdf Size:187K _update_mosfet

1N90
1N90

Dec 2005 BVDSS = 900 V RDS(on) typ HFH11N90 ID = 11 A 900V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

1.12. fqaf11n90c.pdf Size:633K _fairchild_semi

1N90
1N90

QFET FQAF11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 900V, RDS(on) = 1.1? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switching mi

1.13. fqa11n90c f109.pdf Size:823K _fairchild_semi

1N90
1N90

September 2007 QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description 11A, 900V, RDS(on) = 1.1? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 23pF) This advanced technology has been especially tailored to Fast sw

1.14. fqaf11n90.pdf Size:662K _fairchild_semi

1N90
1N90

September 2000 TM QFET QFET QFET QFET FQAF11N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 72 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has

1.15. fqa11n90 fqa11n90 f109.pdf Size:829K _fairchild_semi

1N90
1N90

September 2007 QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description 11.4A, 900V, RDS(on) = 0.96? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especially tailored

1.16. 1n90.pdf Size:220K _utc

1N90
1N90

UNISONIC TECHNOLOGIES CO., LTD 1N90 Power MOSFET 1 Amps, 900 Volts N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 1N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance, superior switching performance. It also can withstand high energy puls

1.17. 11n90.pdf Size:226K _utc

1N90
1N90

UNISONIC TECHNOLOGIES CO., LTD 11N90 Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withst

1.18. sdf11n90.pdf Size:153K _solitron

1N90



1.19. ssf1n90d.pdf Size:401K _silikron

1N90
1N90

 SSF1N90D  Main Product Characteristics: VDSS 900V RDS(on) 15Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

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