1N90 - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 1N90 Power MOSFET 1 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N90 is an N-channel mode power MOSFET, using UTC s advanced technology to provide costomers planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance, superior switching performance. It also can withstand high energy

STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB Order codes VDSS RDS(on)max ID PW 3 3 1 STB21N90K5 250 W 2 1 D2PAK TO-220FP STF21N90K5 40 W 900 V

STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB Order codes VDSS RDS(on)max ID PW 3 3 1 STB21N90K5 250 W 2 1 D2PAK TO-220FP STF21N90K5 40 W 900 V

QFET FQAF11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 900V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fa

September 2007 QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especi

FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switching

September 2007 QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 23pF) This advanced technology has been especially tailored

September 2007 QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especi

September 2000 TM QFET QFET QFET QFET FQAF11N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.2A, 900V, RDS(on) = 0.96 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has

VDSS = 900 V IXCP 01N90E Gate Controlled ID(limit) = 250mA IXCY 01N90E Current Limiter RDS(on)= 80 N-Channel, Enhancement Mode D G S Symbol Test Conditions Maximum Ratings TO-252 (IXCY) VDSS TJ = 25 C to 150 C 900 V TAB VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V G VGS Continuous 20 V S VGSM Transient 30 V PD TC = 25 C40 W TO-220 (IXCP) TJ -55

FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switching

FQA11N90-F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 m Description This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar stripe 11.4 A, 900 V, RDS(on) = 960 m (Max.) @ VGS = 10 V, and DMOS technology. This advanced MOSFET technology ID = 5.7 A has been especially tailored to reduce on-state resistance, Low

UNISONIC TECHNOLOGIES CO., LTD 11N90 Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can w

FMR11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0 0.5V) H

FMH11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0 0.5V)

FMV11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0 0.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB71N90 N-Channel MOSFET TO-263-2L DESCRIPTION The CJB71N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. 1. GATE FEATURES 2. DRAIN Lead free product is acquired 3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD T0-220-3L Plastic-Encapsulate MOSFETS CJP71N90 N-Channel MOSFET TO-220-3L DESCRIPTION The CJP71N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. 1. GATE FEATURES 2. DRAIN 3. SOURCE Lead free product is

N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS Package ID 11 A VDSS 900 V Rdson-max 1.10 Vgs=10V Qg-typ 66nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

Dec 2005 BVDSS = 900 V RDS(on) typ HFH11N90 ID = 11 A 900V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 75 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

TMAN11N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A

nvert Suzhou Convert Semiconductor Co ., Ltd. CS11N90V, CS11N90VF 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS11N90V TO-3P CS11N90V CS

FIR11N90ANG 900V N-Channel MOSFET PIN Connection TO-3P Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) 1.1 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location

isc N-Channel MOSFET Transistor FQA11N90 FEATURES Drain Current I = 11.4A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 0.96 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.