All MOSFET. 3N90 Datasheet

 

3N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 3N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 63 pF

Maximum Drain-Source On-State Resistance (Rds): 4.1 Ohm

Package: TO-220, TO-262, TO-251, TO-252, TO-220F, TO-220F1

3N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3N90 Datasheet (PDF)

1.1. tmu3n90.pdf Size:829K _update

3N90
3N90

 TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 2.5A <5.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD3N90/ TMU3N90 D-PAK/I-PAK TMD3N90 / TMU3N90 RoHS TMD3N90G / TMU3N90G D-PAK/I-PAK TMD3N90G / TMU3

1.2. tmp3n90 tmpf3n90.pdf Size:623K _update

3N90
3N90

TMP3N90/TMPF3N90 TMP3N90G/TMPF3N90G VDSS = 990 V @Tjmax Features ID = 2.5A  Low gate charge RDS(ON) = 5.1 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP3N90 / TMPF3N90 TO-220 / TO-220F TMP3N90 / TMPF3N90 RoHS TMP3N90G / TMPF

 1.3. tmd3n90.pdf Size:829K _upd-mosfet

3N90
3N90

 TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 2.5A <5.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD3N90/ TMU3N90 D-PAK/I-PAK TMD3N90 / TMU3N90 RoHS TMD3N90G / TMU3N90G D-PAK/I-PAK TMD3N90G / TMU3

1.4. ssp3n90.pdf Size:260K _upd-mosfet

3N90
3N90

SSP3N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 1.5. ssh3n90.pdf Size:261K _upd-mosfet

3N90
3N90



1.6. apt33n90jccu3.pdf Size:134K _update_mosfet

3N90
3N90

APT33N90JCCU3 ISOTOP® Buck chopper VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C Super Junction MOSFET ID = 33A @ Tc = 25°C SiC chopper diode Application • AC and DC motor control D • Switched Mode Power Supplies Features • - Ultra low RDSon G - Low Miller capacitance S - Ultra low gate charge - Avalanche energy rated • SiC Schottky Diode - Zero rev

1.7. apt33n90jccu2.pdf Size:134K _update_mosfet

3N90
3N90

APT33N90JCCU2 ISOTOP® Boost chopper VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C Super Junction MOSFET ID = 33A @ Tc = 25°C SiC chopper diode Application • AC and DC motor control K • Switched Mode Power Supplies • Power Factor Correction • Brake switch D Features • - Ultra low RDSon - Low Miller capacitance G - Ultra low gate charge - Avalanche

1.8. cs3n90a3h.pdf Size:631K _update_mosfet

3N90
3N90

Silicon N-Channel Power MOSFET R ○ CS3N90 A3H General Description: VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

1.9. cs3n90fa9h.pdf Size:622K _update_mosfet

3N90
3N90

Silicon N-Channel Power MOSFET R ○ CS3N90F A9H General Description: VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25℃) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

1.10. cs3n90a4h.pdf Size:416K _update_mosfet

3N90
3N90

Silicon N-Channel Power MOSFET R ○ CS3N90 A4H General Description: VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.11. cs3n90a8.pdf Size:496K _update_mosfet

3N90
3N90

Silicon N-Channel Power MOSFET R ○ CS3N90 A8 General Description: VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25℃) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

1.12. tsm3n90ch tsm3n90ci tsm3n90cp tsm3n90cz.pdf Size:518K _update_mosfet

3N90
3N90

 TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 900 5.1 @ VGS =10V 1.5 General Description The TSM3N90 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re

1.13. fqb3n90 fqi3n90.pdf Size:697K _fairchild_semi

3N90
3N90

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has bee

1.14. fqpf3n90.pdf Size:677K _fairchild_semi

3N90
3N90

September 2000 TM QFET QFET QFET QFET FQPF3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.1A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has

1.15. fqb3n90tm.pdf Size:695K _fairchild_semi

3N90
3N90

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced techn

1.16. fqi3n90tu.pdf Size:695K _fairchild_semi

3N90
3N90

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced techn

1.17. fqp3n90.pdf Size:689K _fairchild_semi

3N90
3N90

September 2000 TM QFET QFET QFET QFET FQP3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has

1.18. ssw3n90a.pdf Size:508K _samsung

3N90
3N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V 2 Low RDS(ON) : 4.679 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.19. ssu3n90a.pdf Size:503K _samsung

3N90
3N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 ? (Typ.) 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.20. sss3n90a.pdf Size:506K _samsung

3N90
3N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.21. ssp3n90a.pdf Size:936K _samsung

3N90
3N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.22. ixtm3n80 ixtm3n80a ixtm3n90 ixtm3n90a ixtp3n80 ixtp3n80a ixtp3n90 ixtp3n90a.pdf Size:65K _ixys

3N90



1.23. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

3N90
3N90

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N90 900 V 10 A 1.1 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N90 900 V 12 A 0.9 ? ? ? ? ? IXFH/IXFT 13 N90 900 V 13 A 0.8 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C; RGS = 1

1.24. 3n90.pdf Size:230K _utc

3N90
3N90

UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=4.1? @VGS=10 V * Ultra Low Gate Charge ( typical 22.7 nC ) * Low Reverse Transfer Capacitan

1.25. aotf3n90.pdf Size:272K _aosemi

3N90
3N90

AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 6.7Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed

1.26. ap03n90p-hf.pdf Size:94K _a-power

3N90
3N90

AP03N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 900V D Ў Simple Drive Requirement RDS(ON) 5.2? Ў Fast Switching Characteristic ID 3A G Ў RoHS Compliant & Halogen-Free S Description AP03N90 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter app

1.27. ap03n90i-hf.pdf Size:93K _a-power

3N90
3N90

AP03N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 900V D Ў Fast Switching Characteristic RDS(ON) 4.8? Ў Simple Drive Requirement ID 3A G Ў RoHS Compliant S Description G D AP03N90 series are specially designed as main switching devices for S TO-220CFM(I) universal 90~265VAC off-line AC/DC conver

1.28. ap03n90i.pdf Size:171K _a-power

3N90
3N90

AP03N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 900V D ▼ Fast Switching Characteristic RDS(ON) 4.8Ω ▼ Simple Drive Requirement ID4 3A G ▼ RoHS Compliant S Description AP03N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-

1.29. sdf3n90.pdf Size:218K _solitron

3N90



1.30. sdf13n90.pdf Size:155K _solitron

3N90



1.31. cs3n90 a4h.pdf Size:418K _crhj

3N90
3N90

Silicon N-Channel Power MOSFET R ○ CS3N90 A4H General Description: VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.32. cs3n90 a3h.pdf Size:633K _crhj

3N90
3N90

Silicon N-Channel Power MOSFET R ○ CS3N90 A3H General Description: VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

1.33. cs3n90f a9h.pdf Size:624K _crhj

3N90
3N90

Silicon N-Channel Power MOSFET R ○ CS3N90F A9H General Description: VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25℃) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

1.34. cs3n90 a8.pdf Size:496K _crhj

3N90
3N90

Silicon N-Channel Power MOSFET R ○ CS3N90 A8 General Description: VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25℃) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top