6N90 Datasheet. Specs and Replacement
Type Designator: 6N90 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 110 pF
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6N90 substitution
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6N90 datasheet
6n90.pdf
UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a 1 minimum on-state resistance and superior switching performance. It also can withstand h... See More ⇒
stf6n90k5.pdf
STF6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF6N90K5 900 V 1.10 6 A Industry s lowest R x area DS(on) Industry s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FP Applications ... See More ⇒
stp6n90k5.pdf
STP6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STP6N90K5 900 V 1.10 6 A Industry s lowest R x area DS(on) Industry s best FoM (figure of merit) 3 2 Ultra-low gate charge 1 100% avalanche tested TO-220 Zener-protected App... See More ⇒
fqpf6n90ct.pdf
TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to ... See More ⇒
fqb6n90tm am002.pdf
December 2000 TM QFET QFET QFET QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology... See More ⇒
fqp6n90c fqpf6n90c.pdf
TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to ... See More ⇒
fqpf6n90.pdf
QFET N-CHANNEL FQPF6N90 FEATURES BVDSS = 900V Advanced New Design RDS(ON) = 1.9 Avalanche Rugged Technology ID = 3.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics TO-220F Unrivalled Gate Charge 40nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 1.5 (Typ.) 1 2 3 1. Gate 2. Drain 3. Sou... See More ⇒
fqp6n90.pdf
April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es... See More ⇒
fqa6n90.pdf
April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es... See More ⇒
fqa6n90c f109.pdf
September 2007 QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 11pF) This advanced technology has been especially tailored t... See More ⇒
fqaf6n90.pdf
April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es... See More ⇒
ssh6n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.829 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒
sss6n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.829 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒
ssp6n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.829 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒
ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf
www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D S ID2... See More ⇒
ixfh16n90 ixfx16n90.pdf
IXFH16N90 VDSS = 900 V HiPerFETTM IXFX16N90 ID25 = 16 A Power MOSFETs RDS(on) = 0.65 W N-Channel Enhancement Mode t 200 ns High dv/dt, Low t , HDMOSTM Family rr rr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2... See More ⇒
ixfn26n90 ixfn25n90.pdf
VDSS ID (cont) RDS(on) trr HiPerFETTM Power MOSFETs 900 V 26 A 0.30 W 250 ns IXFN 26N90 Single Die MOSFET IXFN 25N90 900 V 25 A 0.33 W 250 ns N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 900 V S VDGR TJ = 25 C to 150 C; RGS = ... See More ⇒
ixth6n90-a ixtm6n90-a.pdf
VDSS ID25 RDS(on) Standard IXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C6 A T... See More ⇒
ixfh6n90 ixfh6n100 ixfm6n90 ixfm6n100.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 6 N90 900 V 6 A 1.8 W Power MOSFETs IXFH/IXFM 6 N100 1000 V 6 A 2.0 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 6N90 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 6N100 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID2... See More ⇒
fqa6n90c-f109.pdf
FQA6N90C-F109 N-Channel QFET MOSFET Description 900 V, 6 A, 2.3 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 A stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3... See More ⇒
fqp6n90c fqpf6n90c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fmh06n90e.pdf
http //www.fujisemi.com FMH06N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate thres... See More ⇒
fmv06n90e.pdf
http //www.fujisemi.com FMV06N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate t... See More ⇒
apt36n90bc3g.pdf
900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET D3 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This de... See More ⇒
aotf6n90.pdf
AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 6A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
jcs6n90fa jcs6n90ba jcs6n90sa jcs6n90ca jcs6n90gda.pdf
N R N-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS Package ID 6.0 A VDSS 900 V Rdson Vgs=10V 3.0 -MAX Qg-Typ 24.0nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli... See More ⇒
jcs6n90ch jcs6n90fh jcs6n90b.pdf
N R N-CHANNEL MOSFET JCS6N90H Package MAIN CHARACTERISTICS ID 6 A VDSS 900 V Rdson-max 3.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP... See More ⇒
6n90a 6n90af.pdf
RoHS 6N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 6A, 900Volts DESCRIPTION D The Nell 6N90 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G DS G... See More ⇒
cs6n90f a9h.pdf
Silicon N-Channel Power MOSFET R CS6N90F A9H General Description VDSS 900 V CS6N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 48 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.85 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒
cs6n90 a8h.pdf
Silicon N-Channel Power MOSFET R CS6N90 A8H General Description VDSS 900 V CS6N90 A8H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
cs6n90 arh-g.pdf
Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
f6n90.pdf
F6N90 6A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 900V planar technology which reduce the conduction loss, improve switching I = 6.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) = 1... See More ⇒
msf6n90.pdf
MSF6N90 900V N-Channel MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charg... See More ⇒
ms6n90.pdf
MS6N90 900V N-Channel MOSFET Description The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge (... See More ⇒
fhp6n90a fhf6n90a.pdf
N N-CHANNEL MOSFET FHP6N90A /FHF6N90A MAIN CHARACTERISTICS FEATURES ID 6A Low gate charge VDSS 900V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 1.5 Fast switching Qg-typ 34nC 100% 100% avalanche tested dv/dt Improv... See More ⇒
swf6n90d swj6n90d.pdf
SW6N90D N-channel Enhanced mode TO-220F/TO-262N MOSFET TO-220F TO-262N Features BVDSS 900V ID 6A High ruggedness Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 42nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application UPS, LED, SMPS 1 1. Gate 2. Drain 3. Source 3 General Description ... See More ⇒
hfh6n90.pdf
Mar 2010 BVDSS = 900 V RDS(on) typ HFH6N90 ID = 6.0 A 900V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒
hfs6n90.pdf
Dec 2005 BVDSS = 900 V RDS(on) typ HFS6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒
hfw6n90.pdf
March 2013 BVDSS = 900 V RDS(on) typ = 1.95 HFW6N90 / HFI6N90 ID = 6.0 A 900V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW6N90 HFI6N90 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended ... See More ⇒
hfp6n90.pdf
Dec 2005 BVDSS = 900 V RDS(on) typ HFP6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒
mtm6n90.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM6N90(MTM6N90) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power ... See More ⇒
wmk6n90d1 wml6n90d1 wmm6n90d1.pdf
WMK6N90D1 WML6N90D1 WMM6N90D1 900V 6A 1.7 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. D G G G D D S S S Features Typ.R =1.7 @V =... See More ⇒
cs6n90arh-g.pdf
Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
cs6n90f cs6n90p cs6n90b.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS6N90F,CS6N90P,CS6N90B 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS6N90F TO-220F CS6N90F ... See More ⇒
cs6n90f cs6n90p cs6n90b cs6n90w.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS6N90F,CS6N90P,CS6N90B,CS6N90W 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS6N90F TO-220F ... See More ⇒
fir6n90fg.pdf
FIR6N90FG 900V N-Channel MOSFET-T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=30nC (Typ.). BVDSS=900V,ID=6A G D S RDS(on) 2.1 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly L... See More ⇒
tma6n90h tmp6n90h.pdf
TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90... See More ⇒
hm6n90.pdf
HM6N90 General Description VDSS 900 V HM6N90, the silicon N-channel Enhanced ID 6 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25 ) 120 W RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and ... See More ⇒
sfp049n90c3 sfb046n90c3.pdf
SFP049N90C3,SFB046N90C3 N-MOSFET 90V, 3.9m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 90V Excellent QgxRDS(on) product(FOM) RDS(on) 3.9m Qualified according to JEDEC criteria ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFP049N90... See More ⇒
aotf6n90.pdf
isc N-Channel MOSFET Transistor AOTF6N90 FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =2.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒
stf6n90k5.pdf
isc N-Channel MOSFET Transistor STF6N90K5 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
Detailed specifications: 12N90, 9N95, 9N100, 1N90, 2N90, 3N90, 4N90, 5N90, AO3400, 7N90, 1N80, 2N80, 3N80, 4N80, 5N80, 6N80, 7N80
Keywords - 6N90 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
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