All MOSFET. 6N90 Datasheet

 

6N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 6N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 90 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 1.85 Ohm

Package: TO-220F1_TO-220_TO-262

6N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

6N90 Datasheet (PDF)

1.1. msf6n90.pdf Size:1096K _upd-mosfet

6N90
6N90

MSF6N90 900V N-Channel MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220 package is universally preferred for all commercial-industrial applications Features • RDS(on) (Max 2.4 Ω )@VGS=10V • Gate Charg

1.2. fmv06n90e.pdf Size:375K _upd-mosfet

6N90
6N90

http://www.fujisemi.com FMV06N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate t

 1.3. fmh06n90e.pdf Size:387K _upd-mosfet

6N90
6N90

http://www.fujisemi.com FMH06N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate thres

1.4. cs6n90arh-g.pdf Size:609K _update_mosfet

6N90
6N90

Silicon N-Channel Power MOSFET R ○ CS6N90 ARH-G General Description: VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 1.5. hfh6n90.pdf Size:168K _update_mosfet

6N90
6N90

Mar 2010 BVDSS = 900 V RDS(on) typ HFH6N90 ID = 6.0 A 900V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

1.6. hfw6n90.pdf Size:185K _update_mosfet

6N90
6N90

March 2013 BVDSS = 900 V RDS(on) typ = 1.95 HFW6N90 / HFI6N90 ID = 6.0 A 900V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW6N90 HFI6N90 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended

1.7. hfp6n90.pdf Size:184K _update_mosfet

6N90
6N90

Dec 2005 BVDSS = 900 V RDS(on) typ HFP6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

1.8. hfs6n90.pdf Size:173K _update_mosfet

6N90
6N90

Dec 2005 BVDSS = 900 V RDS(on) typ HFS6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(

1.9. fqa6n90c f109.pdf Size:797K _fairchild_semi

6N90
6N90

September 2007 QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description 6A, 900V, RDS(on) = 2.3? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 11pF) This advanced technology has been especially tailored to Fast swit

1.10. fqpf6n90ct.pdf Size:858K _fairchild_semi

6N90
6N90

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

1.11. fqa6n90.pdf Size:726K _fairchild_semi

6N90
6N90

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.4A, 900V, RDS(on) = 1.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been es

1.12. fqp6n90.pdf Size:765K _fairchild_semi

6N90
6N90

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been es

1.13. fqb6n90tm am002.pdf Size:596K _fairchild_semi

6N90
6N90

December 2000 TM QFET QFET QFET QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology

1.14. fqpf6n90.pdf Size:600K _fairchild_semi

6N90
6N90

QFET N-CHANNEL FQPF6N90 FEATURES BVDSS = 900V • Advanced New Design RDS(ON) = 1.9Ω • Avalanche Rugged Technology ID = 3.4A • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics TO-220F • Unrivalled Gate Charge: 40nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 1.5Ω (Typ.) 1 2 3 1. Gate 2. Drain 3. Sou

1.15. fqp6n90c fqpf6n90c.pdf Size:860K _fairchild_semi

6N90
6N90

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switch

1.16. fqaf6n90.pdf Size:723K _fairchild_semi

6N90
6N90

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.5A, 900V, RDS(on) = 1.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been es

1.17. ssp6n90a.pdf Size:863K _samsung

6N90
6N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.18. sss6n90a.pdf Size:506K _samsung

6N90
6N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.19. ssh6n90a.pdf Size:946K _samsung

6N90
6N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.20. ixfn26n90 ixfn25n90.pdf Size:141K _ixys

6N90
6N90

VDSS ID (cont) RDS(on) trr HiPerFETTM Power MOSFETs 900 V 26 A 0.30 W 250 ns IXFN 26N90 Single Die MOSFET IXFN 25N90 900 V 25 A 0.33 W 250 ns N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 900 V S VDGR TJ = 25C to 150C; RGS = 1 MW 90

1.21. ixfh16n90 ixfx16n90.pdf Size:112K _ixys

6N90
6N90

IXFH16N90 VDSS = 900 V HiPerFETTM IXFX16N90 ID25 = 16 A Power MOSFETs RDS(on) = 0.65 W N-Channel Enhancement Mode t £ 200 ns High dv/dt, Low t , HDMOSTM Family rr rr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 2

1.22. ixth6n90-a ixtm6n90-a.pdf Size:104K _ixys

6N90
6N90

VDSS ID25 RDS(on) Standard Ω IXTH / IXTM 6N90 900 V 6 A 1.8 Ω Ω Ω Ω Power MOSFET Ω IXTH / IXTM 6N90A 900 V 6 A 1.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C6 A T

1.23. ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf Size:251K _ixys

6N90
6N90

www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V (TAB) G VGSM Transient ±30 V D S ID2

1.24. ixfh6n90 ixfh6n100 ixfm6n90 ixfm6n100.pdf Size:77K _ixys

6N90
6N90

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 6 N90 900 V 6 A 1.8 W Power MOSFETs IXFH/IXFM 6 N100 1000 V 6 A 2.0 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 6N90 900 V VDGR TJ = 25C to 150C; RGS = 1 MW 6N100 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25

1.25. 6n90.pdf Size:251K _utc

6N90
6N90

UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1 TO-220 ? DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a 1 minimum on-state resistance and superior switching performance. It also can withstand high e

1.26. aotf6n90.pdf Size:184K _aosemi

6N90
6N90

AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 6A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 2.2Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche ca

1.27. sdf6n90.pdf Size:160K _solitron

6N90



1.28. cs6n90 a8h.pdf Size:303K _crhj

6N90
6N90

Silicon N-Channel Power MOSFET R ○ CS6N90 A8H General Description: VDSS 900 V CS6N90 A8H, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.29. cs6n90 arh-g.pdf Size:611K _crhj

6N90
6N90

Silicon N-Channel Power MOSFET R ○ CS6N90 ARH-G General Description: VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.30. cs6n90f a9h.pdf Size:424K _crhj

6N90
6N90

Silicon N-Channel Power MOSFET R ○ CS6N90F A9H General Description: VDSS 900 V CS6N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25℃) 48 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.85 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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