All MOSFET. 7N80 Datasheet

 

7N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: 7N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-263_TO-220_TO-220F_TO-220F1_TO-220F2

7N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

7N80 Datasheet (PDF)

1.1. stl7n80k5.pdf Size:943K _update

7N80
7N80

STL7N80K5 N-channel 800 V, 0.95 Ω typ., 3.6 A Zener-protected SuperMESH™ 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet - production data Features Order code VDS RDS(on)max. ID STL7N80K5 800 V 1.2 Ω 3.6 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit) 2 3 • Ultra low gate charge 4 • 100% avalanche tested PowerFLAT™ 5x6 VHV • Zener

1.2. stf7n80k5 stfi7n80k5.pdf Size:677K _update

7N80
7N80

STF7N80K5, STFI7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT STF7N80K5 800 V 1.2 Ω 6 A 25 W STFI7N80K5 • Worldwide best FOM (figure of merit) 3 2 • Ultra low gate charge 1 1 2 3 TO-220FP • 100% avalanche tested I 2PAKFP

 1.3. std7n80k5.pdf Size:995K _upd

7N80
7N80

STD7N80K5, STP7N80K5, STU7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 2 3 1 STD7N80K5 DPAK STP7N80K5 800 V 1.2 Ω 6 A 110 W TAB STU7N80K5 TAB • Worldwide best FOM (figure of merit) 3 • Ultra low gate charge 2 3 1 2

1.4. stp7n80k5 stu7n80k5.pdf Size:995K _upd

7N80
7N80

STD7N80K5, STP7N80K5, STU7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 2 3 1 STD7N80K5 DPAK STP7N80K5 800 V 1.2 Ω 6 A 110 W TAB STU7N80K5 TAB • Worldwide best FOM (figure of merit) 3 • Ultra low gate charge 2 3 1 2

 1.5. msk7n80f msk7n80t.pdf Size:620K _upd-mosfet

7N80
7N80

800V/7A N-Channel MOSFET MSK7N80T/F 800V/7A N-Channel MOSFET General Description • Fast switching time • Low on resistance, low gate charge • Excellent avalanche characteristics • Suitable for electronic ballast • Suitable for switching mode power supplies TO-220 Features • VDSS=800V, ID=7A; • Low Drain-Source ON Resistance: RDS(ON) =1.55 Ω @ VGS=10V

1.6. msf7n80.pdf Size:851K _upd-mosfet

7N80
7N80

MSF7N80 800V N-Channel MOSFET Description The MSF7N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrins

1.7. hy7n80t.pdf Size:226K _upd-mosfet

7N80
7N80

 SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 – MAXIMUM NON- T1 – FORWARD CURRENT AMBIENT TEMPERATURE (℃) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY7N80T / HY7N80FT 800V / 7A 800V, RDS(ON)=1.65W@VGS=10V, ID=3.5A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • L

1.8. hfs7n80.pdf Size:213K _update_mosfet

7N80
7N80

July 2005 BVDSS = 800 V RDS(on) typ = 1.55 HFS7N80 ID = 7.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Unrivalled Gate Charge : 35 nC (Typ ) E

1.9. hfh7n80.pdf Size:253K _update_mosfet

7N80
7N80

Mar 2010 BVDSS = 800 V RDS(on) typ = 1.55 HFH7N80 ID = 7.0 A 800V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Unrivalled Gate Charge : 35 nC (Typ ) Exte

1.10. cs7n80f.pdf Size:265K _update_mosfet

7N80
7N80

BRF7N80(CS7N80F) N-Channel MOSFET/N 沟 MOS 晶体管 用途: 用于高效 DC/DC 转换和功率开关 Purpose: These devices are well suited for high efficiency switch mode power supplies. 特点:低的门槛电压、反向传输电容小、开关速度快。 Features: Low gate charge、Low Crss 、Fast switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

1.11. cs7n80a8.pdf Size:424K _update_mosfet

7N80
7N80

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.12. mtw7n80erev3.pdf Size:220K _motorola

7N80
7N80

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW7N80E/D Designer's? Data Sheet MTW7N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 With Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 7.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 1.0 OHM scheme to provide enhanced v

1.13. mtw7n80e.pdf Size:190K _motorola

7N80
7N80

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW7N80E/D Designer's? Data Sheet MTW7N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 With Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 7.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 1.0 OHM scheme to provide enhanced v

1.14. fqaf7n80.pdf Size:766K _fairchild_semi

7N80
7N80

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been esp

1.15. fqi7n80tu.pdf Size:836K _fairchild_semi

7N80
7N80

October 2008 QFET® FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been especially

1.16. fqp7n80.pdf Size:798K _fairchild_semi

7N80
7N80

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been es

1.17. fqb7n80tm am002.pdf Size:836K _fairchild_semi

7N80
7N80

October 2008 QFET® FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been especially

1.18. fqa7n80c.pdf Size:609K _fairchild_semi

7N80
7N80

TM QFET FQA7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 800V, RDS(on) = 1.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast

1.19. fqa7n80.pdf Size:732K _fairchild_semi

7N80
7N80

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7.2A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been es

1.20. fqi7n80 fqb7n80.pdf Size:836K _fairchild_semi

7N80
7N80

October 2008 QFET FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been especially tailored to

1.21. fqp7n80c fqpf7n80c.pdf Size:848K _fairchild_semi

7N80
7N80

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast swit

1.22. fqpf7n80.pdf Size:787K _fairchild_semi

7N80
7N80

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been e

1.23. fqa7n80c f109.pdf Size:798K _fairchild_semi

7N80
7N80

September 2007 QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description 7.0A, 800V, RDS(on) = 1.9? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 10pF) This advanced technology has been especially tailored to Fast swi

1.24. ssp7n80a.pdf Size:862K _samsung

7N80
7N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.25. ssh7n80a.pdf Size:941K _samsung

7N80
7N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.26. sss7n80a.pdf Size:507K _samsung

7N80
7N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.27. spp17n80c3 spa17n80c3.rev.2.7.pdf Size:977K _infineon

7N80
7N80

SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor VDS 800 V Feature RDS(on) 0.29 ? New revolutionary high voltage technology ID 17 A Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-220-3-31: Fully isolated

1.28. spw17n80c3 rev2.91.pdf Size:505K _infineon

7N80
7N80

SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.29 ? DS(on)max Extreme dv/dt rated Q 88 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

1.29. spb17n80c3 rev2.5 ratio.pdf Size:426K _infineon

7N80
7N80

SPB17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS new revolutionary high voltage technology R @ Tj = 25C 0.29 ? DS(on)max Extreme dv/dt rated Q 91 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Co

1.30. spp17n80c3 rev2.91.pdf Size:491K _infineon

7N80
7N80

SPP17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.29 ? DS(on)max Extreme dv/dt rated Q 88 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

1.31. ixft17n80q.pdf Size:559K _ixys

7N80
7N80

IXFH 17N80Q VDSS = 800 V HiPerFETTM IXFT 17N80Q ID25 = 17 A Power MOSFETs Ω RDS(on) = 0.60 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet TO-268 (D3) (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 M

1.32. ixfr27n80q.pdf Size:54K _ixys

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7N80

IXFK 27N80Q HiPerFETTM VDSS = 800 V IXFR 27N80Q ID25 = 27 A Power MOSFETs IXFX 27N80Q RDS(on) = 300 mW Q-CLASS Single MOSFET Die trr £ 250 ns PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr (TAB) G D Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V G

1.33. ixfh7n80 ixfm7n80.pdf Size:76K _ixys

7N80
7N80

HiPerFETTM IXFH 7 N80 VDSS = 800 V Power MOSFETs IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W N-Channel Enhancement Mode trr = 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C7 A TO-204 AA (IXFM

1.34. ixfk25n80 ixfk27n80 ixfn25n80 ixfn27n80.pdf Size:162K _ixys

7N80
7N80

Not for New Designs VDSS ID25 RDS(on) ? IXFK 27N80 800 V 27 A 0.30 ? ? ? HiPerFETTM Power MOSFETs ? ? IXFK 25N80 800 V 25 A 0.35 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ? IXFN 27N80 800 V 27 A 0.30 ? ? ? ? ? IXFN 25N80 800 V 25 A 0.35 ? ? ? ? TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25C to 150C 800 800

1.35. ixfk27n80 ixfn27n80 ixfk25n80 ixfn25n80.pdf Size:151K _ixys

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VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs N-Channel Enhancement Mode IXFK 27N80 800 V 27 A 0.30 W Avalanche Rated, High dv/dt, Low trr IXFK 25N80 800 V 25 A 0.35 W IXFN 27N80 800 V 27 A 0.30 W IXFN 25N80 800 V 25 A 0.35 W Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 800 V VGS Continuo

1.36. ixfi7n80p.pdf Size:139K _ixys

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7N80

IXFA 7N80P VDSS = 800 V PolarHVTM HiPerFET IXFI 7N80P ID25 = 7 A Power MOSFET ≤ Ω IXFP 7N80P RDS(on) ≤ Ω ≤ 1.44 Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode ≤ trr ≤ ≤ 250 ns ≤ ≤ Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 800 V G VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 800 V S (TAB) V

1.37. 7n80.pdf Size:236K _utc

7N80
7N80

UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 TO-220 ? DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and 1 TO-220F DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can with

1.38. apt17n80bc3.pdf Size:171K _apt

7N80
7N80

APT17N80BC3 APT17N80SC3 Ω 800V 17A 0.290Ω Ω Ω Ω D3PAK Super Junction MOSFET TO-247 COOLMOS Power Semiconductors • Ultra low RDS(ON) D • Low Miller Capacitance • Ultra Low Gate Charge, Qg G • Avalanche Energy Rated S • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT17N80BC3_SC

1.39. apt17n80sc3.pdf Size:171K _apt

7N80
7N80

APT17N80BC3 APT17N80SC3 Ω 800V 17A 0.290Ω Ω Ω Ω D3PAK Super Junction MOSFET TO-247 COOLMOS Power Semiconductors • Ultra low RDS(ON) D • Low Miller Capacitance • Ultra Low Gate Charge, Qg G • Avalanche Energy Rated S • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT17N80BC3_SC

1.40. kf7n80p-f.pdf Size:397K _kec

7N80
7N80

KF7N80P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N80P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supp

1.41. sif7n80c.pdf Size:300K _sisemi

7N80
7N80

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF7N80C N- MOS / N-CHANNEL POWER MOSFET SIF7N80C N- MOS / N-CHANN

1.42. 7n80.pdf Size:1860K _goford

7N80
7N80

GOFORD 7N80 800V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 800V 2Ω 7A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well sui

1.43. 7n80f.pdf Size:1859K _goford

7N80
7N80

GOFORD 7N80 800V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 800V 2Ω 7A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well sui

1.44. sdf07n80 sdp07n80.pdf Size:516K _samhop

7N80
7N80

SDP07N80 SDF07N80 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (Ω) Typ VDSS ID Rugged and reliable. 800V 7A 1.4 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Mar

1.45. bra7n80.pdf Size:505K _blue-rocket-elect

7N80
7N80

BRA7N80(BRCS7N80A) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-262 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.46. br7n80.pdf Size:987K _blue-rocket-elect

7N80
7N80

BR7N80(BRCS7N80R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低的门槛电压、反向传输电容小、开关速度快。 Low gate charge, Low Crss , Fast switching. 用途 / Applications 用于高效 DC/DC 转换和功率开关。 These devices are well su

1.47. brb7n80.pdf Size:989K _blue-rocket-elect

7N80
7N80

BRB7N80(BRCS7N80B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.48. brf7n80.pdf Size:1072K _blue-rocket-elect

7N80
7N80

BRF7N80(BRCS7N80FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低的门槛电压、反向传输电容小、开关速度快。 Low gate charge、Low Crss 、Fast switching. 用途 / Applications 用于高效 DC/DC 转换和功率开关。 These devices are

1.49. hfp7n80.pdf Size:514K _shantou-huashan

7N80
7N80

 Shantou Huashan Electronic Devices Co., Ltd. HFP7N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

1.50. cs7n80f a9.pdf Size:303K _crhj

7N80
7N80

Silicon N-Channel Power MOSFET R ○ CS7N80F A9 General Description: VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.51. cs7n80 a8.pdf Size:424K _crhj

7N80
7N80

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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