7N80. Аналоги и основные параметры
Наименование производителя: 7N80
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 142 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-263 TO-220 TO-220F TO-220F1 TO-220F2
Аналог (замена) для 7N80
- подборⓘ MOSFET транзистора по параметрам
7N80 даташит
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ssp7n80a.pdf
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June 2021 BVDSS = 800 V RDS(on) Typ = 1.55 HFS7N80A ID = 7.0 A 800V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Oper
hfs7n80.pdf
July 2005 BVDSS = 800 V RDS(on) typ = 1.55 HFS7N80 ID = 7.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Unrivalled Gate Charge 35 nC (Typ ) E
msk7n80f msk7n80t.pdf
800V/7A N-Channel MOSFET MSK7N80T/F 800V/7A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220 Features VDSS=800V, ID=7A; Low Drain-Source ON Resistance RDS(ON) =1.55 @ VGS=10V
tsp7n80m tsf7n80m.pdf
TSP7N80M/TSF7N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 40nC) minimize on-state resistance, provide superior switching High ruggedness performance, and
wmj27n80d1.pdf
WMJ27N80D1 800V 27A 0.28 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayon s 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features Typ.R =0.28 @V =10V DS(on) GS 100% avalanch
wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf
WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80M WMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET 0V 1.6 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf
wml7n80d1.pdf
WML7N80D1 800V 7A 1.4 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D Features S Typ.R =1.4 @V =10V DS(on) GS 100% avalanche tested
wml07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3 wmn07n80m3.pdf
WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80M WMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET 0V 1.6 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf
cs7n80a8.pdf
Silicon N-Channel Power MOSFET R CS7N80 A8 General Description VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25 ) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs7n80fa9.pdf
Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs7n80f cs7n80p.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS7N80F, CS7N80P 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N80F TO-220F CS7N80F CS7N8
hm7n80d.pdf
HM7N80D General Description VDSS 800 V , the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 185 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization
hm7n80 hm7n80f.pdf
HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 27nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin
sfp070n80c2 sfb067n80c2.pdf
SFP070N80C2, SFB067N80C2 N-MOSFET 80V, 6.0m , 118A Product Summary General Description VDS 80V Trench Power technology Low RDS(ON) RDS(on) 6.0m Low Gate Charge ID 118A Optimized for fast-switching applications 100% DVDS Tested Applications 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested S
sfp090n80c2 sfb087n80c2.pdf
SFP090N80C2,SFB087N80C2 N-MOSFET 80V, 7.4m , 80A Features Product Summary Extremely low on-resistance RDS(on) VDS 80V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 7.4m Qualified according to JEDEC criteria ID 80A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFP09
spa17n80c3.pdf
isc N-Channel MOSFET Transistor SPA17N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.29 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
spw17n80c3.pdf
isc N-Channel MOSFET Transistor SPW17N80C3 ISPW17N80C3 FEATURES Static drain-source on-resistance RDS(on) 290m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag
fqpf7n80c.pdf
isc N-Channel MOSFET Transistor FQPF7N80C FEATURES Drain-source on-resistance RDS(on) 1.9 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
spb17n80c3.pdf
Isc N-Channel MOSFET Transistor SPB17N80C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
spp17n80c3.pdf
isc N-Channel MOSFET Transistor SPP17N80C3 ISPP17N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.29 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABS
std7n80k5.pdf
isc N-Channel MOSFET Transistor STD7N80K5 FEATURES Static drain-source on-resistance RDS(on) 1.2 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 800 V DSS V Gate-Source Voltage 30 V
Другие IGBT... 6N90, 7N90, 1N80, 2N80, 3N80, 4N80, 5N80, 6N80, STP75NF75, 8N80, 9N80, 10N80, 12N80, 1N70Z, 2N70, 2N70Z, 2N70ZL
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