1N70Z Datasheet. Specs and Replacement

Type Designator: 1N70Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm

Package: TO-92

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1N70Z datasheet

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1N70Z

UNISONIC TECHNOLOGIES CO., LTD 1N70Z Power MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies... See More ⇒

Detailed specifications: 4N80, 5N80, 6N80, 7N80, 8N80, 9N80, 10N80, 12N80, AO3401, 2N70, 2N70Z, 2N70ZL, 2N70K, 3N70, 3N70A, 3N70K, 4N70

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