1N70Z PDF Specs and Replacement
Type Designator: 1N70Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
Package: TO-92
1N70Z substitution
1N70Z PDF Specs
1n70z.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N70Z Power MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies... See More ⇒
Detailed specifications: 4N80 , 5N80 , 6N80 , 7N80 , 8N80 , 9N80 , 10N80 , 12N80 , AO3401 , 2N70 , 2N70Z , 2N70ZL , 2N70K , 3N70 , 3N70A , 3N70K , 4N70 .
History: PSMN5R2-60YL
Keywords - 1N70Z MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: PSMN5R2-60YL
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