1N70Z MOSFET. Datasheet pdf. Equivalent
Type Designator: 1N70Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 1.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 9.3 Ohm
Package: TO-92
1N70Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
1N70Z Datasheet (PDF)
1.1. 1n70z.pdf 
Size:304K _utc
UNISONIC TECHNOLOGIES CO., LTD 1N70Z Power MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, P
Datasheet: 4N80 , 5N80 , 6N80 , 7N80 , 8N80 , 9N80 , 10N80 , 12N80 , IRF4905 , 2N70 , 2N70Z , 2N70ZL , 2N70K , 3N70 , 3N70A , 3N70K , 4N70 .
