3N70A Specs and Replacement

Type Designator: 3N70A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-252

3N70A substitution

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3N70A datasheet

 ..1. Size:260K  utc
 3n70a.pdf pdf_icon

3N70A

UNISONIC TECHNOLOGIES CO., LTD 3N70A Power MOSFET 700V, 3A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching appli... See More ⇒

 0.1. Size:351K  wuxi china
 cs3n70a3h-g.pdf pdf_icon

3N70A

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

Detailed specifications: 10N80, 12N80, 1N70Z, 2N70, 2N70Z, 2N70ZL, 2N70K, 3N70, K4145, 3N70K, 4N70, 4N70K, 5N70K, 6N70, 7N70, 8N70, 9N70

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