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6N65Z Specs and Replacement

Type Designator: 6N65Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-220F

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6N65Z datasheet

 ..1. Size:245K  utc
 6n65z.pdf pdf_icon

6N65Z

UNISONIC TECHNOLOGIES CO., LTD 6N65Z Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switch... See More ⇒

Detailed specifications: 5N70K, 6N70, 7N70, 8N70, 9N70, 10N70, 12N70, 15N70, STP80NF70, 7N65A, 7N65, 7N65Z, 7N65K, 8N65, 9N65, 10N65, 10N65Z

Keywords - 6N65Z MOSFET specs

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