All MOSFET. 2N65 Datasheet

 

2N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 3.9 Ohm

Package: TO-220_TO-262_TO-126_TO-251_TO-252_TO-220F

2N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N65 Datasheet (PDF)

1.1. 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf Size:298K _rca

2N65

1.2. stw62n65m5.pdf Size:894K _update

2N65
2N65

STW62N65M5 Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ M5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW62N65M5 710 V 0.049 Ω 46 A • Designed for automotive applications and AEC-Q101 qualified 3 2 • Extremely low RDS(on) 1 • Low gate charge and input capacitance TO-247 • Excellent sw

 1.3. stl12n65m2.pdf Size:460K _update

2N65
2N65

STL12N65M2 N-channel 650 V, 0.62 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL12N65M2 650 V 0.75 Ω 5 A 48 W 1 • Extremely low gate charge 2 3 • Excellent output capacitance (COSS) profile 4 • 100% avalanche tested • Zener-protected PowerFLAT™ 5x6 HV Ap

1.4. stf12n65m2.pdf Size:837K _update

2N65
2N65

STF12N65M2 N-channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max ID STF12N65M2 650 V 0.5 Ω 8 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested 3 2 • Zener-protected 1 Applications TO-220FP • Switching applications Figure

 1.5. 2n6546-t1-t3 2n6547-t1-t3.pdf Size:628K _update

2N65
2N65

The documentation and process conversion measures necessary to comply with this document shall be INCH-POUND completed by 13 February 2014. MIL-PRF-19500/525F 13 December 2013 SUPERSEDING MIL-PRF-19500/525E 1 October 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6546, 2N6546T1, 2N6546T3, 2N6547, 2N6547T1, AND 2N6547

1.6. tmp2n65az tmpf2n65az.pdf Size:604K _update

2N65
2N65

TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 650V 1.8A < 4.6W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMP2N65AZ / TMPF2N65AZ TO-220 / TO-220F TMP2N65AZ / TMPF2N65AZ RoHS TMP2N65AZG

1.7. tmu2n65az.pdf Size:449K _update

2N65
2N65

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 650V 1.8A < 4.6W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD2N65AZ / TMU2N65AZ D-PAK/I-PAK TMD2N65AZ / TMU2N65AZ RoHS TMD

1.8. stl22n65m5.pdf Size:1156K _update

2N65
2N65

STL22N65M5 N-channel 650 V, 0.180 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — production data Features VDS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL22N65M5 710 V 0.210 Ω 15 A(1) D(3) 1. The value is rated according to Rthj-case and limited by package. ■ 100% avalanche tested PowerFLAT™ 8x8 HV ■ Low

1.9. 2n6517m 3cg6517m.pdf Size:264K _update

2N65
2N65

2N6517M(3CG6517M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高压电路。/Purpose: High voltage application. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 ℃ j T -55~150 ℃ stg 电性能参数/Electrical characteristics(T

1.10. std12n65m2.pdf Size:935K _upd

2N65
2N65

STD12N65M2 N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N65M2 650 V 0.5 Ω 8 A  Extremely low gate charge  Excellent output capacitance (COSS) profile DPAK (TO-252)  100% avalanche tested  Zener-protected Figure 1: Internal schematic diagram Applicatio

1.11. srm12n65.pdf Size:251K _upd

2N65
2N65

Datasheet 12A, 650V, N-Channel Power MOSFET SRM12N65 General Description Symbol The Sanrise SRM12N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM12N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

1.12. am12n65p.pdf Size:287K _upd-mosfet

2N65
2N65

Analog Power AM12N65P N-Channel 650-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 800 @ VGS = 10V • Low thermal impedance 650 12a 850 @ VGS = 6V • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems DRAIN connected • Industrial DC/DC Conversion Circuits

1.13. sihf22n65e.pdf Size:163K _upd-mosfet

2N65
2N65

SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Available Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Availa

1.14. ceef02n65g.pdf Size:387K _upd-mosfet

2N65
2N65

CEEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-126F package. G G D S CEE SERIES TO-126F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Unit

1.15. sihf12n65e.pdf Size:134K _upd-mosfet

2N65
2N65

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

1.16. sihb12n65e.pdf Size:150K _upd-mosfet

2N65
2N65

SiHB12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

1.17. hy2n65d.pdf Size:168K _upd-mosfet

2N65
2N65

SINGLE FIG.SINGLE CURVE FIG. 2 – NON- T1 – FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz (℃) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY2N65D / HY2N65M 650V / 2A 650V, RDS(ON)=4.6W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 • Low On-State Resistance • Fast Switching • Low Gate Cha

1.18. am12n65pcfm.pdf Size:271K _upd-mosfet

2N65
2N65

Analog Power AM12N65PCFM N-Channel 650-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 800 @ VGS = 10V 7 • Low thermal impedance 650 850 @ VGS = 6V 6.5 • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTH

1.19. afn12n65t220ft afn12n65t220t.pdf Size:568K _upd-mosfet

2N65
2N65

AFN12N65 Alfa-MOS 650V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N65 is an N-channel enhancement mode Power 650V/6A,RDS(ON)=0.8Ω(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-stat

1.20. tmd2n65az.pdf Size:449K _upd-mosfet

2N65
2N65

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 650V 1.8A < 4.6W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD2N65AZ / TMU2N65AZ D-PAK/I-PAK TMD2N65AZ / TMU2N65AZ RoHS TMD

1.21. hy12n65t.pdf Size:128K _upd-mosfet

2N65
2N65

HY12N65T / HY12N65FT 650V / 12A 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 • In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S S

1.22. sfp12n65.pdf Size:475K _upd-mosfet

2N65
2N65

SFP12N65 SFP12N65 SFP12N65 SFP12N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 30nC) ■ Fast Switching Capability ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usin

1.23. sihp12n65e.pdf Size:167K _upd-mosfet

2N65
2N65

SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

1.24. sihp22n65e.pdf Size:167K _upd-mosfet

2N65
2N65

SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Available Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Availab

1.25. sihb22n65e.pdf Size:209K _upd-mosfet

2N65
2N65

SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Qgd (nC) 32 •

1.26. msf12n65.pdf Size:995K _upd-mosfet

2N65
2N65

MSF12N65 650V N-Channel MOSFET Description The MSF12N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low gate charge ( typical 52nC) • High

1.27. hy2n65t.pdf Size:146K _upd-mosfet

2N65
2N65

HY2N65T / HY2N65FT 650V / 2A 650V, RDS(ON)=4.6W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives 1 1

1.28. sihg22n65e.pdf Size:185K _upd-mosfet

2N65
2N65

SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Available Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Availab

1.29. wff12n65.pdf Size:388K _update_mosfet

2N65
2N65

WFF12N65 WFF12N65 WFF12N65 WFF12N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technol

1.30. cs12n65fa9h.pdf Size:342K _update_mosfet

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS12N65F A9H VDSS 650 V General Description: ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.31. hfd2n65s.pdf Size:257K _update_mosfet

2N65
2N65

Mar 2010 BVDSS = 650 V RDS(on) typ = 5.0 HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N65S HFU2N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.

1.32. hfs12n65u.pdf Size:158K _update_mosfet

2N65
2N65

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65U ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

1.33. hfp2n65u.pdf Size:191K _update_mosfet

2N65
2N65

Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFP2N65U ID = 2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

1.34. cs12n65a8h.pdf Size:346K _update_mosfet

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS12N65 A8H VDSS 650 V General Description: ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.35. hfp2n65s.pdf Size:191K _update_mosfet

2N65
2N65

Sep 2009 BVDSS = 650 V RDS(on) typ HFP2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(O

1.36. hfd2n65u.pdf Size:199K _update_mosfet

2N65
2N65

Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFD2N65U / HFU2N65U ID = 1.8 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N65U HFU2N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty

1.37. hfs12n65s.pdf Size:240K _update_mosfet

2N65
2N65

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65S ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

1.38. hfp12n65s.pdf Size:246K _update_mosfet

2N65
2N65

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFP12N65S ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

1.39. hfp12n65u.pdf Size:173K _update_mosfet

2N65
2N65

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFP12N65U ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

1.40. hfs2n65u.pdf Size:302K _update_mosfet

2N65
2N65

Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFS2N65U ID = 2 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower

1.41. hfs2n65s.pdf Size:182K _update_mosfet

2N65
2N65

Sep 2009 BVDSS = 650 V RDS(on) typ HFS2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS

1.42. 2n6515 2n6516 2n6517 2n6519 2n6520.pdf Size:329K _motorola

2N65
2N65

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit CollectorEmitter

1.43. 2n6515 2n6517 2n6519 2n6520.pdf Size:229K _motorola

2N65
2N65

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit CollectorEmitter Voltage VCEO 250 300 350 Vdc CollectorBase

1.44. 2n6547re.pdf Size:182K _motorola

2N65
2N65

Order this document MOTOROLA by 2N6547/D SEMICONDUCTOR TECHNICAL DATA 2N6547 Designer's? Data Sheet 15 AMPERE Switchmode Series NPN Silicon NPN SILICON POWER TRANSISTORS Power Transistors 300 and 400 VOLTS 175 WATTS The 2N6547 transistor is designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 an

1.45. 2n6576 2n6577 2n6578.pdf Size:148K _motorola

2N65
2N65

Order this document MOTOROLA by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 NPN Silicon Power Darlington 2N6578 Transistors Generalpurpose EpiBase power Darlington transistors, suitable for linear and switching applications. 15 AMPERE POWER TRANSISTORS Replacement for 2N3055 and Driver NPN SILICON High Gain Darlington Performance DARLINGTON Builtin Diode Protection

1.46. stb42n65m5 stf42n65m5 sti42n65m5 stp42n65m5 stw42n65m5.pdf Size:1097K _st

2N65
2N65

STx42N65M5 N-channel 650 V, 0.070 ?, 33 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 1 STB42N65M5 710 V < 0.079 ? 33 A 2 1 1 STF42N65M5 710 V < 0.079 ? 33 A (1) TO-220 D?PAK TO-220FP STI42N65M5 710 V < 0.079 ? 33 A STP42N65M5 710 V < 0.079 ? 33 A STW42N65M5 710 V < 0.079 ? 33 A 1. Limited only by maxim

1.47. 2n6547 .pdf Size:45K _st

2N65
2N65

2N6547 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS 1 SWITCH MODE POWER SUPPLIES 2 FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS TO-3 DESCRIPTION The 2N6547 is a silicon Multiepitaxial Mesa NPN transistor mounted in TO-3 metal

1.48. 2n6547.pdf Size:43K _st

2N65
2N65

2N6547 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS 1 SWITCH MODE POWER SUPPLIES 2 FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS TO-3 DESCRIPTION The 2N6547 is a silicon Multiepitaxial Mesa NPN transistor mounted in TO-3 metal

1.49. std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf Size:1040K _st

2N65
2N65

STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 ?, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V < 0.43 ? 8.5 A 70 W 1 STP12N65M5 8.5 A 70 W DPAK STU12N65M5 8.5 A 70 W 3 1. Limited only by

1.50. stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf Size:1086K _st

2N65
2N65

STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 ?, 24 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS@ Type RDS(on) max ID TJmax 3 3 1 2 3 1 2 STB32N65M5 710 V < 0.119 ? 24 A 1 D?PAK I?PAK STF32N65M5 710 V < 0.119 ? 24 A(1) TO-220FP STI32N65M5 710 V < 0.119 ? 24 A STP32N65M5 710 V < 0.119 ? 24 A STW32N65M5 710

1.51. sty112n65m5.pdf Size:823K _st2

2N65
2N65

STY112N65M5 N-channel 650 V, 0.019 ?, 96 A, MDmesh V Power MOSFET Max247 Features VDSS Order code RDS(on) max ID @TjMAX STY112N65M5 710 V < 0.022 ? 96 A Max247 worldwide best RDS(on) Higher VDSS rating 3 2 Higher dv/dt capability 1 Excellent switching performance Max247 Easy to drive 100% avalanche tested Application Figure 1. Internal schematic diagram Switching

1.52. 2n6520.pdf Size:156K _fairchild_semi

2N65
2N65

June 2009 2N6520 PNP Epitaxial Silicon Transistor Features High Voltage Transistor Collector-Emitter Voltage: VCBO= -350V Collector Dissipation: PC (max)=625mW Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -3

1.53. 2n6517.pdf Size:175K _fairchild_semi

2N65
2N65

August 2010 2N6517 NPN Epitaxial Silicon Transistor Features High Voltage Transistor Collector Dissipation: PC(max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 2N6517 350

1.54. 2n6519.pdf Size:26K _fairchild_semi

2N65
2N65

2N6519 High Voltage Transistor Collector-Emitter Voltage: VCEO= -300V Collector Dissipation: PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector

1.55. 2n6518.pdf Size:26K _fairchild_semi

2N65
2N65

2N6518 High Voltage Transistor Collector-Emitter Voltage: VCEO= -250V Collector Dissipation: PC (max)=625mW Complement to 2N6515 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Vo

1.56. 2n6520.pdf Size:81K _samsung

2N65
2N65

2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 W Derate above 25 5 mW/ Junction Temperature TJ 50

1.57. 2n6517.pdf Size:21K _samsung

2N65

2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Collector Dissipation PC 625 mW Juncti

1.58. 2n6516.pdf Size:35K _samsung

2N65

1.59. 2n6515.pdf Size:43K _samsung

2N65
2N65

2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Collector Dissipation PC 625 mW Junct

1.60. 2n6576 2n6577 2n6578.pdf Size:92K _central

2N65
2N65

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.61. 2n6551 2n6552 2n6553 2n6554 2n6555 2n6556.pdf Size:91K _central

2N65
2N65

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.62. 2n6548 2n6549.pdf Size:63K _central

2N65

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.63. 2n6544 2n6545.pdf Size:463K _central

2N65
2N65

2N6544 2N6545 www.centralsemi.com NPN SILICON DESCRIPTION: POWER TRANSISTOR The CENTRAL SEMICONDUCTOR 2N6544, 2N6545 types are Silicon NPN Triple Diffused Mesa Transistors designed for high voltage, high current, high speed switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) SYMBOL 2N6544 2N6545 UNITS Collector-Emitter Voltage VCEV 650 850 V Coll

1.64. ixth52n65x.pdf Size:151K _ixys

2N65
2N65

X-Class VDSS = 650V IXTH52N65X Power MOSFET ID25 = 52A   RDS(on)    68m     N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G = Gate D = Drain ID25 TC = 25C52 A S = Source

1.65. ixth32n65x ixtp32n65x ixtq32n65x.pdf Size:212K _ixys

2N65
2N65

Preliminary Technical Information X-Class VDSS = 650V IXTP32N65X Power MOSFET ID25 = 32A IXTQ32N65X   RDS(on)    135m     IXTH32N65X N-Channel Enhancement Mode TO-220AB (IXTP) G D Tab S Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V G VGSS Continuous 30 V

1.66. ixth62n65x2.pdf Size:113K _ixys

2N65
2N65

Advance Technical Information X2-Class VDSS = 650V IXTH62N65X2 Power MOSFET ID25 = 62A   RDS(on)    52m     N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25C to 150C 650 V G = Gate D = Drain VDGR TJ = 25C to 150C, RGS = 1M 650 V S = Source Tab = Drain VGSS Continu

1.67. ixtn102n65x2.pdf Size:126K _ixys

2N65
2N65

Advance Technical Information X2-Class VDSS = 650V IXTN102N65X2 Power MOSFET ID25 = 76A   RDS(on)  30m       N-Channel Enhancement Mode Avalanche Rated miniBLOC Fast Intrinsic Diode E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Continuous  30 V D VG

1.68. ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf Size:200K _ixys

2N65
2N65

Advance Technical Information X2-Class VDSS = 650V IXTA12N65X2 Power MOSFET ID25 = 12A IXTP12N65X2   RDS(on)    300m     IXTH12N65X2 N-Channel Enhancement Mode TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30

1.69. ixtr102n65x2.pdf Size:145K _ixys

2N65
2N65

Advance Technical Information X2-Class VDSS = 650V IXTR102N65X2 Power MOSFET ID25 = 54A   RDS(on)  33m       (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous  30 V G VG

1.70. ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf Size:168K _ixys

2N65
2N65

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2   RDS(on)    160m     IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to

1.71. ixtp2n65x2 ixty2n65x2.pdf Size:183K _ixys

2N65
2N65

Preliminary Technical Information X2-Class VDSS = 650V IXTY2N65X2 Power MOSFET ID25 = 2A IXTP2N65X2   RDS(on)    2.3     N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient

1.72. ixtk102n65x2 ixtx102n65x2.pdf Size:193K _ixys

2N65
2N65

Preliminary Technical Information X2-Class VDSS = 650V IXTK102N65X2 Power MOSFET ID25 = 102A IXTX102N65X2   RDS(on)  30m       N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 650 V D Tab VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Contin

1.73. ixtp32n65xm.pdf Size:130K _ixys

2N65
2N65

Preliminary Technical Information X-Class VDSS = 650V IXTP32N65XM Power MOSFET ID25 = 14A   RDS(on)    135m     N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V G D VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Continuous 30 V G = Gate D = Drain VGSM Transient 40 V S = S

1.74. 2n6515 2n6517 2n6520.pdf Size:116K _onsemi

2N65
2N65

NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com Voltage and Current are Negative for PNP Transistors COLLECTOR These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage VCBO Vdc

1.75. 2n65k.pdf Size:229K _utc

2N65
2N65

UNISONIC TECHNOLOGIES CO., LTD 2N65K Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

1.76. 2n65.pdf Size:241K _utc

2N65
2N65

UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p

1.77. 2n65l.pdf Size:181K _utc

2N65
2N65

UNISONIC TECHNOLOGIES CO., LTD 2N65L Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is 1 TO-220F designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the hi

1.78. 2n65z.pdf Size:201K _utc

2N65
2N65

UNISONIC TECHNOLOGIES CO., LTD 2N65Z Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-251 TO-252 The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at 1 1 high speed

1.79. 22n65.pdf Size:252K _utc

2N65
2N65

UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) < 0.35? * Ultra low gate charge ( Ty

1.80. 2n6546-47.pdf Size:211K _mospec

2N65
2N65

A A A A

1.81. 2n6569.pdf Size:144K _mospec

2N65
2N65

A A A

1.82. 2n6544-45.pdf Size:217K _mospec

2N65
2N65

A A A A

1.83. 2n6542 2n6543.pdf Size:209K _mospec

2N65
2N65

A A A A

1.84. 2n6530.pdf Size:296K _no

2N65
2N65

1.85. 2n6581.pdf Size:11K _semelab

2N65

2N6581 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 450V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.86. 2n6537.pdf Size:11K _semelab

2N65

2N6537 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 120V IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

1.87. 2n6561.pdf Size:12K _semelab

2N65

2N6561 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.88. 2n6560.pdf Size:11K _semelab

2N65

2N6560 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 450V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.89. 2n6575.pdf Size:11K _semelab

2N65

2N6575 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.90. 2n6511.pdf Size:11K _semelab

2N65

2N6511 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 250V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

1.91. 2n6512.pdf Size:11K _semelab

2N65

2N6512 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

1.92. 2n6535.pdf Size:11K _semelab

2N65

2N6535 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 100V IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

1.93. 2n6583.pdf Size:11K _semelab

2N65

2N6583 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.94. 2n6520.pdf Size:237K _secos

2N65
2N65

2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? High voltage transistors TO-92 G H Collector J ?? Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - K D 3.30 3.81 Base E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. H 1.10 -

1.95. 2n6517.pdf Size:130K _secos

2N65

2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? High Voltage Transistors G H ? Complement of the 2N6520 ?Emitter ?Base J ?Collector A D Millimeter B REF. Collector Min. Max. ?? A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.81 ?? E 0.36 0.56

1.96. ssd02n65.pdf Size:1443K _secos

2N65
2N65

SSD02N65 2A , 650V , RDS(ON) 8? N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applica

1.97. rt2n65m.pdf Size:113K _isahaya

2N65
2N65



1.98. 2n6594.pdf Size:160K _bocasemi

2N65
2N65

A Boca Semiconductor Corp http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com

1.99. 2n6515-7 9 2n6520.pdf Size:214K _cdil

2N65
2N65

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT 2N6519 2N6520 VCEO Collector Emitter Voltage 250 300 350 V VCBO

1.100. 2n657.pdf Size:198K _cdil

2N65
2N65

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 100 V VCBO Collector Base Voltage 100 V VEBO Emitter Base Voltage 8.0 V IC Collect

1.101. 2n6537.pdf Size:155K _jmnic

2N65
2N65

JMnic Product Specification Silicon NPN Power Transistors 2N6537 DESCRIPTION ·With TO-66 package ·DARLINGTON APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CO

1.102. 2n6543.pdf Size:135K _jmnic

2N65

Power Transistors www.jmnic.com 2N6543 Silicon NPN Transistors Features Intended for high voltage,fast switching applications With TO-3 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 850 V VCEO Collector to emitter voltage 400 V VEBO Emitter to base voltage 9.0 V ICP Peak collector current 16 A IC Collector current 5.0 A PC

1.103. 2n6569.pdf Size:150K _jmnic

2N65
2N65

JMnic Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION ·With TO-3 package ·Complement to type 2N6594 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PAR

1.104. 2n6546.pdf Size:187K _jmnic

2N65
2N65

JMnic Product Specification Silicon NPN Power Transistors 2N6546 2N6547 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base

1.105. 2n6542.pdf Size:153K _jmnic

2N65
2N65

JMnic Product Specification Silicon NPN Power Transistors 2N6542 2N6543 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rating

1.106. 2n6533.pdf Size:116K _jmnic

2N65
2N65

Product Specification www.jmnic.com Silicon Power Transistors 2N6533 DESCRIPTION ·DARLINGTON ·With TO-220 package APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=

1.107. 2n6576 2n7577 2n7578.pdf Size:153K _jmnic

2N65
2N65

JMnic Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Audio amplifiers ·Hammer drivers ·Series and shunt regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?

1.108. 2n6535.pdf Size:119K _jmnic

2N65
2N65

Product Specification www.jmnic.com Silicon Power Transistors 2N6535 DESCRIPTION ·DARLINGTON ·With TO-66 package APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETE

1.109. 2n6594.pdf Size:151K _jmnic

2N65
2N65

JMnic Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION ·With TO-3 package ·Complement to type 2N6569 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARA

1.110. 2n6547.pdf Size:42K _jmnic

2N65
2N65

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6547 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base

1.111. 2n6534.pdf Size:155K _jmnic

2N65
2N65

JMnic Product Specification Silicon NPN Power Transistors 2N6534 DESCRIPTION ·With TO-66 package ·DARLINGTON APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CO

1.112. 2n6536.pdf Size:155K _jmnic

2N65
2N65

JMnic Product Specification Silicon NPN Power Transistors 2N6536 DESCRIPTION ·With TO-66 package ·DARLINGTON APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CO

1.113. 2n6537.pdf Size:125K _inchange_semiconductor

2N65
2N65

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6537 DESCRIPTION Ў¤ With TO-66 package Ў¤ DARLINGTON APPLICATIONS Ў¤ Power switching Ў¤ Hammer drivers Ў¤ Series and shunt regulators Ў¤ Audio amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ў

1.114. 2n6569.pdf Size:117K _inchange_semiconductor

2N65
2N65

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6594 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(

1.115. 2n6542 2n6543.pdf Size:118K _inchange_semiconductor

2N65
2N65

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage,high speed APPLICATIONS Ў¤ Switching regulators Ў¤ PWM inverters and motor controls Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6542 2N6543 Fig.1 simplified outline (TO-3) and symbol

1.116. 2n65462n6547.pdf Size:148K _inchange_semiconductor

2N65
2N65

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : Ў¤ Switching regulators Ў¤ PWM inverters and motor controls Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitte

1.117. 2n6594.pdf Size:117K _inchange_semiconductor

2N65
2N65

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6569 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(

1.118. 2n6576 2n6577 2n6578.pdf Size:118K _inchange_semiconductor

2N65
2N65

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ Power switching Ў¤ Audio amplifiers Ў¤ Hammer drivers Ў¤ Series and shunt regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6576 2N6577 2N6578 Fig.1 simplified outline (TO-3) and symbol Absol

1.119. 2n6500.pdf Size:52K _inchange_semiconductor

2N65
2N65

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, a

1.120. 2n6536.pdf Size:125K _inchange_semiconductor

2N65
2N65

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6536 DESCRIPTION Ў¤ With TO-66 package Ў¤ DARLINGTON APPLICATIONS Ў¤ Power switching Ў¤ Hammer drivers Ў¤ Series and shunt regulators Ў¤ Audio amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ў

1.121. cep12n65 ceb12n65 cef12n65.pdf Size:386K _cet

2N65
2N65

CEP12N65/CEB12N65 CEF12N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N65 650V 0.73? 12A 10V CEB12N65 650V 0.73? 12A 10V CEF12N65 650V 0.73? 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES

1.122. cep02n65g ceb02n65g cef02n65g.pdf Size:393K _cet

2N65
2N65

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5? 2A 10V CEB02N65G 650V 5.5? 2A 10V CEF02N65G 650V 5.5? 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)

1.123. ceu02n65g ced02n65g.pdf Size:417K _cet

2N65
2N65

CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

1.124. cep02n65a ceb02n65a cef02n65a.pdf Size:391K _cet

2N65
2N65

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5? 1.3A 10V CEB02N65A 650V 10.5? 1.3A 10V CEF02N65A 650V 10.5? 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES

1.125. ceu02n65a ced02n65a.pdf Size:416K _cet

2N65
2N65

CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25

1.126. wnm12n65-f.pdf Size:1048K _willsemi

2N65
2N65

WNM12N65/WNM12N65F WNM12N65/WNM12N65F 650V N-Channel MOSFET Description Features °C The WNM12N65/WNM12N65F is N-Channel  650V@TJ=25 enhancement MOS Field Effect Transistor. Uses  Typ.RDS(on)=0.57Ω advanced high voltage MOSFET Process and  Low gate charge design to provide excellent RDS (ON) with low gate  100% avalanche tested charge. This device is suitable for use in p

1.127. h02n65.pdf Size:164K _hsmc

2N65
2N65

Spec. No. : MOS200910 HI-SINCERITY Issued Date : 2009.04.07 Revised Date : MICROELECTRONICS CORP. Page No. : 1/6 H02N65 Series Pin Assignment H02N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power Field Effect Transistor Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description 3 2 This high voltage MOSFET uses an advanced termination scheme to

1.128. h12n65.pdf Size:199K _hsmc

2N65
2N65

Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.03.24 Revised Date :2009.08.05 MICROELECTRONICS CORP. Page No. : 1/6 H12N65 Series H12N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E N-Channel Power MOSFET (650V,12A) Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Applications 3 • Switch Mode Power Supply 2 1 • Uninterruptable Power Supply 3-Lead

1.129. aot12n65.pdf Size:381K _aosemi

2N65
2N65

AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

1.130. aow12n65.pdf Size:240K _aosemi

2N65
2N65

AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss al

1.131. aob12n65l.pdf Size:385K _aosemi

2N65
2N65

AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.72Ω performance and robustness in popular AC-DC applications. By providing low RDS

1.132. aowf12n65.pdf Size:240K _aosemi

2N65
2N65

AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss al

1.133. aotf12n65.pdf Size:381K _aosemi

2N65
2N65

AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

1.134. sif12n65c.pdf Size:293K _sisemi

2N65
2N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF12N65C N- MOS 管/ N-CHANNEL POWER MOSFET SIF12N65C

1.135. sif2n65c.pdf Size:582K _sisemi

2N65
2N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N65C N- MOS / N-CHANNEL POWER MOSFET SIF2N65C N- MOS / N-CHANN

1.136. sif2n65c 1.pdf Size:371K _sisemi

2N65
2N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N65C N- MOS / N-CHANNEL POWER MOSFET SIF2N65C N- MOS / N-CHANN

1.137. sif2n65d.pdf Size:332K _sisemi

2N65
2N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N65D N- MOS / N-CHANNEL POWER MOSFET SIF2N65D N- MOS / N-CHANN

1.138. mtn2n65i3.pdf Size:336K _cystek

2N65
2N65

Spec. No. : C722I3 Issued Date : 2009.08.14 CYStech Electronics Corp. Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDSON(typ): 6.2Ω MTN2N65I3 ID : 1.8A Description The MTN2N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

1.139. mtn2n65ai3.pdf Size:337K _cystek

2N65
2N65

Spec. No. : C799I3 Issued Date : 2010.03.29 CYStech Electronics Corp. Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDSON(typ.) : 5.0Ω MTN2N65AI3 ID : 2A Description The MTN2N65AI3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

1.140. mtn2n65fp.pdf Size:273K _cystek

2N65
2N65

Spec. No. : C722FP Issued Date : 2010.03.15 CYStech Electronics Corp. Revised Date :2012.11.08 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 5.8Ω (typ.) MTN2N65FP ID : 1.8A Description The MTN2N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

1.141. mtn12n65fp.pdf Size:407K _cystek

2N65
2N65

Spec. No. : C802FP Issued Date : 2010.01.08 CYStech Electronics Corp. Revised Date : 2012.01.13 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 0.6Ω (typ.) MTN12N65FP ID : 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

1.142. mtn2n65j3.pdf Size:333K _cystek

2N65
2N65

Spec. No. : C722J3 Issued Date : 2010.08.06 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDSON(typ): 6.2Ω MTN2N65J3 ID : 1.8A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package

1.143. 12n65a 12n65af.pdf Size:1107K _goford

2N65
2N65

12N65A/12N65AF GOFORD Description Features • VDSS RDS(ON) ID @ 10V (typ) 12A 650V 0.65Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • Active power factor correction • Uninterruptible Power Supply (UPS) • Electronic lamp ballasts Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter TO-220

1.144. sdf02n65 sdp02n65.pdf Size:188K _samhop

2N65
2N65

SDP02N65 SDF02N65 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (Ω) Max VDSS ID Rugged and reliable. 650V 2A 5.6 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Mar

1.145. ssf12n65f.pdf Size:433K _silikron

2N65
2N65

 SSF12N65F  Main Product Characteristics: VDSS 650V RDS(on) 0.68Ω(typ.) ID 12A Marking and pin TO220F Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.146. ftp02n65b fta02n65b ftq02n65b.pdf Size:275K _inpower_semi

2N65
2N65

FTP02N65B FTA02N65B FTQ02N65B N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor VDSS RDS(ON) (Max.) ID • Charger 650V 8.0 Ω 1.5A • SMPS Standby Power • LCD Panel Power Features: • RoHS Compliant • Low ON Resistance D • Low Gate Charge G G • Peak Current vs Pulse Width Curve DS DS • Inductive Switching Curves TO-220 TO-220F G Order

1.147. ftp02n65 fta02n65.pdf Size:317K _inpower_semi

2N65
2N65

FTP02N65 FTA02N65 N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor VDSS RDS(ON) (Max.) ID • Charger 650V 5.0 Ω 2.0A • SMPS Standby Power • LCD Panel Power Features: D • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G D G • Inductive Switching Curves S D S Ordering Information TO-220

1.148. brd2n65.pdf Size:693K _blue-rocket-elect

2N65
2N65

BRD2N65(BRCS2N65D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.149. bri2n65.pdf Size:911K _blue-rocket-elect

2N65
2N65

BRI2N65(BRCS2N65I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high ef

1.150. brf12n65.pdf Size:852K _blue-rocket-elect

2N65
2N65

BRF12N65(BRCS12N65FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, Low Crss , Fast switching. 用途 / Applications 用于高频开关电源,电子镇流器,UPS 电源。 High efficiency sw

1.151. brf2n65.pdf Size:1664K _blue-rocket-elect

2N65
2N65

BRF2N65(BRCS2N65F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

1.152. cs2n65 a3hy.pdf Size:242K _crhj

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS2N65 A3HY General Description: VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.153. cs2n65 a3.pdf Size:235K _crhj

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS2N65 A3 General Description: VDSS 650 V CS2N65 A3, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

1.154. cs12n65f a9h.pdf Size:342K _crhj

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS12N65F A9H VDSS 650 V General Description: ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.155. cs12n65 a8r.pdf Size:271K _crhj

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS12N65 A8R General Description: VDSS 650 V CS12N65 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.156. cs12n65f a9r.pdf Size:269K _crhj

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS12N65F A9R General Description: VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.157. cs12n65 a8h.pdf Size:346K _crhj

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS12N65 A8H VDSS 650 V General Description: ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.158. cs2n65 a4hy.pdf Size:545K _crhj

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS2N65 A4HY General Description: VDSS 650 V CS2N65 A4HY, the silicon N-channel Enhanced ID 2 A PD(TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.159. cs2n65f a9hy.pdf Size:733K _crhj

2N65
2N65

Silicon N-Channel Power MOSFET R ○ CS2N65F A9HY General Description: VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25℃) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.160. cm2n65f.pdf Size:145K _jdsemi

2N65
2N65

R CM2N65F 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

1.161. cm12n65f.pdf Size:127K _jdsemi

2N65
2N65

R CM12N65F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 1 开关速度快 2 通态电阻小,输入电容小

1.162. cm12n65 to220a.pdf Size:144K _jdsemi

2N65
2N65

R CM12N65 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

1.163. cm12n65af.pdf Size:125K _jdsemi

2N65
2N65

R CM12N65AF 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 2 通态电阻小,输入电容

1.164. cm12n65a to220a.pdf Size:123K _jdsemi

2N65
2N65

R CM12N65A 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3

1.165. cm2n65c.pdf Size:126K _jdsemi

2N65

R CM2N65C 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、P E C 辅助电源等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3

1.166. 2n6520.pdf Size:98K _first_silicon

2N65

SEMICONDUCTOR 2N6520 TECHNICAL DATA B C 2N6520 TRANSISTOR (PNP) DIM MILLIMETERS FEATURES A 4.70 MAX E B 4.80 MAX G C 3.70 MAX Complement to 2N6517 D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 0.50 L 2.30 F F M 0.51 MAX 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) TO-92 Symbol Parameter Value Unit VCBO Collect

1.167. 2n6517.pdf Size:160K _first_silicon

2N65

SEMICONDUCTOR 2N6517 TECHNICAL DATA B C 2N6517 TRANSISTOR (NPN) DIM MILLIMETERS A 4.70 MAX E FEATURES G B 4.80 MAX C 3.70 MAX D Complement To 2N6520 D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 0.50 L 2.30 F F M 0.51 MAX 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR TO-92 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto

1.168. ftk2n65p f d i.pdf Size:340K _first_silicon

2N65
2N65

SEMICONDUCTOR FTK2N65P / F / D / I TECHNICAL DATA 2 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS I : technology. 1 This advanced technology has been especially tailored TO - 251 to minimize on - state resistance , provide superior switching performance,and Withstand high energy

1.169. ftk12n65p f dd.pdf Size:421K _first_silicon

2N65
2N65

SEMICONDUCTOR FTK12N65P/F/DD TECHNICAL DATA 12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse i

1.170. kx12n65f.pdf Size:1489K _kexin

2N65
2N65

DIP Type MOSFET N-Channel MOSFET KX12N65F TO-220F Unit:mm 10.16 0.20 ø3.18 0.10 2.54 0.20 (7.00) (0.70) ■ Features ● VDS (V) = 650V (1.00x45 ) ● ID = 12 A (VGS = 10V) ● RDS(ON) < 850mΩ (VGS = 10V) 1 2 3 MAX1.47 ● High ruggedness 0.80 0.10 D #1 0.35 0.10 +0.10 0.50 –0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0.20] [2.54 0.20] 9.40 0.20 G 1. Gate 2. Drain

1.171. mdis2n65bth.pdf Size:928K _magnachip

2N65
2N65

 MDIS2N65B N-Channel MOSFET 650V, 1.95A, 4.5Ω General Description Features The MDIS2N65B uses advanced MagnaChip’s  V = 650V DS MOSFET technology, which provides low on-state  I = 1.95A @V = 10V D GS resistance, high switching performance and  RDS(ON) ≤ 4.5Ω @VGS = 10V excellent quality. MDIS2N65B is suitable device for SMPS, compact ballast, battery charge

1.172. msf12n65.pdf Size:995K _bruckewell

2N65
2N65

MSF12N65 650V N-Channel MOSFET Description The MSF12N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low gate charge ( typical 52nC) • High

1.173. wfp12n65s.pdf Size:266K _winsemi

2N65
2N65

WFP12N65S Super-junction N-Channel Power MOSFET Features ■ 12A,650V,R (Max0.30Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 84.4nC) ■ High EAS energy ■ 100%Avalanche Tested ■ RoHS Compliant ■ Maximum Junction Temperature Range(150℃) General Description This Super-junction Power MOSFET is produced using Winsemi's employs a deep trench filling process t

1.174. wff2n65b.pdf Size:537K _winsemi

2N65
2N65

WFF2N65B WFF2N65B WFF2N65B WFF2N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 2A,650V(Type),R (Max 5Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(V =4000V AC) ISO � Maximum Junction Temperature Range(150℃) Gener

1.175. wfp12n65.pdf Size:380K _winsemi

2N65
2N65

WFP12N65 WFP12N65 WFP12N65 WFP12N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Po wer MOS FE T is pro du ced usi ng Win se mi ’s adva nce d planar stripe, VDMOS technology. This late

1.176. wff2n65.pdf Size:785K _winsemi

2N65
2N65

WFF2N65 WFF2N65 WFF2N65 WFF2N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 2A,650V(Type),R (Max 5Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(V =4000V AC) ISO � Maximum Junction Temperature Range(150℃) � Halog

Datasheet: 10N65Z , 10N65K , 15N65 , 18N65 , 20N65 , 22N65 , 1N65A , 1N65 , BUZ10 , 2N65L , 2N65Z , 2N65K , 3N65A , 3N65 , 3N65Z , 3N65K , 4N65 .

 
Back to Top

 


2N65
  2N65
  2N65
 

social 

LIST

Last Update

MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |

 

 

 
Back to Top