All MOSFET. 2N65L Datasheet


2N65L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N65L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 54 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 3.9 Ohm

Package: TO-220_TO-251_TO-252_TO-220F

2N65L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N65L Datasheet (PDF)

1.1. 2n65l.pdf Size:181K _utc


UNISONIC TECHNOLOGIES CO., LTD 2N65L Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is 1 TO-220F designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the hi

1.2. aob12n65l.pdf Size:385K _aosemi


AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.72Ω performance and robustness in popular AC-DC applications. By providing low RDS


Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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