2N65L
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N65L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 54
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 2
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 9
nC
trⓘ -
Время нарастания: 25
ns
Cossⓘ - Выходная емкость: 40
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.9
Ohm
Тип корпуса:
TO-220
TO-251
TO-252
TO-220F
Аналог (замена) для 2N65L
2N65L
Datasheet (PDF)
..1. Size:181K utc
2n65l.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2N65L Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is 1TO-220Fdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the
0.2. Size:270K utc
2n65l-tms4-t 2n65g-tms4-t 2n65l-tn3-r 2n65g-tn3-r 2n65l-tnd-r 2n65g-tnd-r 2n65g-k08-5060-r.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
0.8. Size:385K aosemi
aob12n65l.pdf 
AOT12N65/AOTF12N65/AOB12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 & AOB12N65 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
0.9. Size:214K winsemi
wff2n65l.pdf 
WFF2N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD2.0A,650V,R (Max5.0)@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced
0.10. Size:296K winsemi
wfu2n65l.pdf 
WFU2N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD2.0A,650V,R (Max5.0)@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced
0.11. Size:255K winsemi
wfd2n65l.pdf 
WFD2N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD2.0A,650V,R (Max5.0)@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced
0.12. Size:253K inchange semiconductor
aob12n65l.pdf 
isc N-Channel MOSFET Transistor AOB12N65LFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
0.13. Size:250K inchange semiconductor
aotf12n65l.pdf 
isc N-Channel MOSFET Transistor AOTF12N65LFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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