All MOSFET. 2N65Z Datasheet


2N65Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N65Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 3.9 Ohm

Package: TO-251_TO-252_TO-220F_TO-220F1

2N65Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N65Z Datasheet (PDF)

1.1. 2n65z.pdf Size:201K _utc


UNISONIC TECHNOLOGIES CO., LTD 2N65Z Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-251 TO-252 The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at 1 1 high speed

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