All MOSFET. 2N65Z Datasheet

 

2N65Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N65Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.9 Ohm
   Package: TO-251 TO-252 TO-220F TO-220F1

 2N65Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N65Z Datasheet (PDF)

 ..1. Size:201K  utc
 2n65z.pdf

2N65Z 2N65Z

UNISONIC TECHNOLOGIES CO., LTD 2N65Z Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-251 TO-252The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at 1 1high sp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PHB44N06LT

 

 
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