2N65Z Specs and Replacement
Type Designator: 2N65Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.9 Ohm
Package: TO-251 TO-252 TO-220F TO-220F1
2N65Z substitution
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2N65Z datasheet
2n65z.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65Z Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-251 TO-252 The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at 1 1 high sp... See More ⇒
Detailed specifications: 15N65 , 18N65 , 20N65 , 22N65 , 1N65A , 1N65 , 2N65 , 2N65L , STF13NM60N , 2N65K , 3N65A , 3N65 , 3N65Z , 3N65K , 4N65 , 4N65Z , 4N65K .
Keywords - 2N65Z MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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