2N65Z MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N65Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 28 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 3.9 Ohm
Package: TO-251_TO-252_TO-220F_TO-220F1
2N65Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N65Z Datasheet (PDF)
1.1. 2n65z.pdf 
Size:201K _utc
UNISONIC TECHNOLOGIES CO., LTD 2N65Z Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-251 TO-252 The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at 1 1 high speed
Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .
