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3N65A Specs and Replacement

Type Designator: 3N65A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm

Package: TO-252

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3N65A datasheet

 ..1. Size:358K  utc
 3n65a.pdf pdf_icon

3N65A

UNISONIC TECHNOLOGIES CO., LTD 3N65A Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching appli... See More ⇒

 0.1. Size:345K  wuxi china
 cs3n65a4h-g.pdf pdf_icon

3N65A

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

Detailed specifications: 20N65 , 22N65 , 1N65A , 1N65 , 2N65 , 2N65L , 2N65Z , 2N65K , 2N60 , 3N65 , 3N65Z , 3N65K , 4N65 , 4N65Z , 4N65K , 5N65 , 5N65K .

History: IRFH8201PBF

Keywords - 3N65A MOSFET specs

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