3N65Z Datasheet and Replacement
Type Designator: 3N65Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 10 nC
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
Package: TO-220F
3N65Z substitution
3N65Z Datasheet (PDF)
..1. Size:344K utc
3n65z.pdf
3n65z.pdf
UNISONIC TECHNOLOGIES CO., LTD 3N65Z Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION 1TO-220FThe UTC 3N65Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switchi
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