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3N65Z Specs and Replacement

Type Designator: 3N65Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm

Package: TO-220F

3N65Z substitution

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3N65Z datasheet

 ..1. Size:344K  utc
 3n65z.pdf pdf_icon

3N65Z

UNISONIC TECHNOLOGIES CO., LTD 3N65Z Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N65Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switchi... See More ⇒

Detailed specifications: 1N65A , 1N65 , 2N65 , 2N65L , 2N65Z , 2N65K , 3N65A , 3N65 , P60NF06 , 3N65K , 4N65 , 4N65Z , 4N65K , 5N65 , 5N65K , 6N65 , 5N60 .

Keywords - 3N65Z MOSFET specs

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