All MOSFET. 4N65Z Datasheet

 

4N65Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: 4N65Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220F

 4N65Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4N65Z Datasheet (PDF)

 ..1. Size:334K  utc
 4n65z.pdf

4N65Z 4N65Z

UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate 1charge, low on-state resistance and have a high rugged avalanche TO-220Fcharacteristic. This power MOSFET is usually used in high speed switching applicat

 0.1. Size:475K  trinnotech
 tmd4n65z tmu4n65z.pdf

4N65Z 4N65Z

TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 0.2. Size:628K  trinnotech
 tmp4n65z tmpf4n65z.pdf

4N65Z 4N65Z

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRLZ44NS

 

 
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