All MOSFET. 4N65Z Datasheet

 

4N65Z Datasheet and Replacement


   Type Designator: 4N65Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220F
 

 4N65Z substitution

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4N65Z Datasheet (PDF)

 ..1. Size:334K  utc
 4n65z.pdf pdf_icon

4N65Z

UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate 1charge, low on-state resistance and have a high rugged avalanche TO-220Fcharacteristic. This power MOSFET is usually used in high speed switching applicat

 0.1. Size:475K  trinnotech
 tmd4n65z tmu4n65z.pdf pdf_icon

4N65Z

TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 0.2. Size:628K  trinnotech
 tmp4n65z tmpf4n65z.pdf pdf_icon

4N65Z

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

Datasheet: 2N65L , 2N65Z , 2N65K , 3N65A , 3N65 , 3N65Z , 3N65K , 4N65 , IRF730 , 4N65K , 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , 6N60Z , 7N60A .

History: 2SJ598-Z | HN1L03FU | FQI70N08 | STP6NA60

Keywords - 4N65Z MOSFET datasheet

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