4N65Z Datasheet and Replacement
Type Designator: 4N65Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-220F
4N65Z substitution
4N65Z Datasheet (PDF)
4n65z.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate 1charge, low on-state resistance and have a high rugged avalanche TO-220Fcharacteristic. This power MOSFET is usually used in high speed switching applicat
tmd4n65z tmu4n65z.pdf
TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
tmp4n65z tmpf4n65z.pdf
TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
Datasheet: 2N65L , 2N65Z , 2N65K , 3N65A , 3N65 , 3N65Z , 3N65K , 4N65 , IRFZ46N , 4N65K , 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , 6N60Z , 7N60A .
Keywords - 4N65Z MOSFET datasheet
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