All MOSFET. 12N50 Datasheet

 

12N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 12N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 195 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 54 nS

Drain-Source Capacitance (Cd): 198 pF

Maximum Drain-Source On-State Resistance (Rds): 0.42 Ohm

Package: TO-220_TO-220F_TO-220F1_TO-220F2_TO-263

12N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12N50 Datasheet (PDF)

1.1. stf12n50m2.pdf Size:660K _update

12N50
12N50

STF12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STF12N50M2 500 V 0.38 Ω 10 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 2 • Low gate input resistance 1 • 100% avalanche tested TO-220FP • Zener-protected Appli

1.2. std12n50m2.pdf Size:748K _upd

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12N50

STD12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STD12N50M2 500 V 0.38 Ω 10 A TAB • Extremely low gate charge 3 • Excellent output capacitance (COSS) profile 1 • 100% avalanche tested DPAK • Zener-protected Applications • Switching applications Figure 1. Int

 1.3. siha12n50e.pdf Size:164K _upd-mosfet

12N50
12N50

SiHA12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.4. stp12n50m2.pdf Size:618K _upd-mosfet

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12N50

STP12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID TAB STP12N50M2 500 V 0.38 Ω 10 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 • Low gate input resistance 2 1 • 100% avalanche tested TO-220 • Zener-protected Appl

 1.5. sihb12n50c sihf12n50c.pdf Size:179K _upd-mosfet

12N50
12N50

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

1.6. fmi12n50es.pdf Size:507K _upd-mosfet

12N50
12N50

FMI12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.

1.7. fmc12n50es.pdf Size:510K _upd-mosfet

12N50
12N50

FMC12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.

1.8. sihp12n50c.pdf Size:179K _upd-mosfet

12N50
12N50

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

1.9. fmv12n50e.pdf Size:374K _upd-mosfet

12N50
12N50

FMV12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

1.10. fml12n50es.pdf Size:278K _upd-mosfet

12N50
12N50

http://www.fujisemi.com FML12N50ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0±0.2 7.0±0.2 0.4±0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow

1.11. sihp12n50e.pdf Size:158K _upd-mosfet

12N50
12N50

SiHP12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.12. sihb12n50e.pdf Size:200K _upd-mosfet

12N50
12N50

SiHB12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.13. fmc12n50e.pdf Size:452K _upd-mosfet

12N50
12N50

FMC12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.14. fmp12n50es.pdf Size:478K _upd-mosfet

12N50
12N50

FMP12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.5V

1.15. sihd12n50e.pdf Size:185K _upd-mosfet

12N50
12N50

SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.16. fmp12n50e.pdf Size:444K _upd-mosfet

12N50
12N50

FMP12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.17. fmv12n50es.pdf Size:487K _upd-mosfet

12N50
12N50

FMV12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.

1.18. fdpf12n50nzt.pdf Size:370K _upd-mosfet

12N50
12N50

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS(on) = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 23nC ) stripe, DMOS technology. • Low Crss ( Typ. 14pF ) This advanced tech

1.19. fmi12n50e.pdf Size:448K _upd-mosfet

12N50
12N50

FMI12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.20. fdp12n50 fdpf12n50.pdf Size:446K _fairchild_semi

12N50
12N50

June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65? Features Description RDS(on) = 0.55? (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has been especially

1.21. fdp12n50nz fdpf12n50nz.pdf Size:377K _fairchild_semi

12N50
12N50

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52? Features Description RDS(on) = 0.46? ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced technology has be

1.22. fdp12n50f fdpf12n50ft.pdf Size:695K _fairchild_semi

12N50
12N50

December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7? Features Description RDS(on) = 0.59? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has been espe

1.23. fqi12n50tu.pdf Size:616K _fairchild_semi

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TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 39 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored

1.24. fdb12n50u.pdf Size:643K _fairchild_semi

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12N50

March 2008 TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8? Features Description RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has been especiall

1.25. fdp12n50u fdpf12n50ut.pdf Size:646K _fairchild_semi

12N50
12N50

November 2007 Ultra FRFETTM FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8? Features Description RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has

1.26. fdb12n50f.pdf Size:602K _fairchild_semi

12N50
12N50

November 2007 UniFETTM FDB12N50F tm N-Channel MOSFET, FRFET 500V, 11.5A, 0.7? Features Description RDS(on) = 0.59? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has been especially

1.27. fdp12n50 fdpf12n50t.pdf Size:535K _fairchild_semi

12N50
12N50

May 2012 UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has be

1.28. fqb12n50tm am002.pdf Size:616K _fairchild_semi

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12N50

TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 39 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored

1.29. fdb12n50tm.pdf Size:2875K _fairchild_semi

12N50
12N50

June 2007 UniFETTM FDB12N50TM tm N-Channel MOSFET 500V, 11.5A, 0.65? Features Description RDS(on) = 0.55? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 12pF) This advanced technology has been especially tailored

1.30. irfbl12n50a.pdf Size:175K _international_rectifier

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PD - 91818A SMPS MOSFET IRFBL12N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45? 13A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-D2PakTM Avalanche Voltage

1.31. sihp12n50c sihb12n50c sihf12n50c.pdf Size:154K _vishay

12N50
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1.32. zxt12n50dx.pdf Size:261K _diodes

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ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 45m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSOP8 FEA

1.33. spb12n50c3 rev.2.4.pdf Size:1694K _infineon

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SPB12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11.6 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance - Type Package Ordering Code Marking 12N50C3 SPB12N50C3 PG-TO263 Q67040-S4641 Maximum Ratings Parameter

1.34. spw12n50c3 rev[1].2.5 pcn.pdf Size:763K _infineon

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VDS Tjmax ? G G

1.35. ixti12n50p.pdf Size:157K _ixys

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VDSS = 500V PolarTM Power MOSFET IXTA12N50P ID25 = 12A IXTI12N50P ≤ Ω RDS(on) ≤ 500mΩ ≤ Ω ≤ Ω ≤ Ω IXTP12N50P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 500 V S (TAB) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V Leaded TO-263 (IXTI) ID25

1.36. ixth12n50a ixtm12n50a.pdf Size:62K _ixys

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VDSS ID25 RDS(on) Standard Ω IXTH 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω Power MOSFET Ω IXTM 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C12 A IDM TC

1.37. ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf Size:65K _ixys

12N50



1.38. 12n50.pdf Size:214K _utc

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UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

1.39. aotf12n50.pdf Size:433K _aosemi

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AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.40. aob12n50.pdf Size:434K _aosemi

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AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.41. aowf12n50.pdf Size:281K _aosemi

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AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS The AOW12N50 & AOWF12N50 have been fabricated 600V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.52Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

1.42. aot12n50.pdf Size:433K _aosemi

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AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.43. aow12n50.pdf Size:281K _aosemi

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AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS The AOW12N50 & AOWF12N50 have been fabricated 600V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.52Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

1.44. aob12n50l.pdf Size:257K _aosemi

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AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.45. mdf12n50bth.pdf Size:1149K _magnachip

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1.46. mdp12n50bth.pdf Size:1149K _magnachip

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MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65Ω General Description Features The MDP/F12N50B uses advanced Magnachip’s VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) ≤ 0.65Ω @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc

1.47. mdp12n50fth.pdf Size:1068K _magnachip

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12N50

 MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip’s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R ≤ 0.7Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic

1.48. mdf12n50fth.pdf Size:1068K _magnachip

12N50
12N50

 MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip’s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R ≤ 0.7Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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