All MOSFET. 14N50 Datasheet

 

14N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 14N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 238 pF

Maximum Drain-Source On-State Resistance (Rds): 0.34 Ohm

Package: TO-263

14N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

14N50 Datasheet (PDF)

1.1. sihg14n50d.pdf Size:178K _upd-mosfet

14N50
14N50

SiHG14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.4 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 58 - Reduced Capacitive Switching Losses Qgs (nC) 8 - High Body Diode Ruggedness Qgd (nC) 14 - Avalanche Energy Rated (UIS)

1.2. sihp14n50d.pdf Size:208K _upd-mosfet

14N50
14N50

SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.4 - Low Input Capacitance (Ciss) Qg max. (nC) 58 - Reduced Capacitive Switching Losses Qgs (nC) 8 - High Body Diode Ruggedness Qgd (nC) 14 - Avalanche Energy Rated (UIS) Co

 1.3. cmt14n50.pdf Size:190K _update_mosfet

14N50
14N50

CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to w

1.4. mtw14n50e.pdf Size:178K _motorola

14N50
14N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW14N50E/D Designer's? Data Sheet MTW14N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 14 AMPERES 500 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.40 OHM energy in the avalanche a

 1.5. mtw14n50erev4.pdf Size:205K _motorola

14N50
14N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW14N50E/D Designer's? Data Sheet MTW14N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 14 AMPERES 500 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.40 OHM energy in the avalanche a

1.6. phw14n50e 3.pdf Size:84K _philips2

14N50
14N50

Philips Semiconductors Product specification PowerMOS transistors PHW14N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 14 A g Low thermal resistance RDS(ON) ? 0.4 ? s GENERAL DESCRIPTION PINNING SOT429 (TO247) N-channel, enhance

1.7. 14n50.pdf Size:193K _utc

14N50
14N50

UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power 1 MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and TO-263 faster switching speed. It can also withstand high energy pulse under the avalanche and co

1.8. aowf14n50.pdf Size:324K _aosemi

14N50
14N50

AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS The AOW14N50 & AOWF14N50 have been fabricated 600V@150℃ using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V) designed to deliver high levels of performance and < 0.38Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

1.9. aotf14n50fd.pdf Size:232K _aosemi

14N50
14N50

AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.47Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and

1.10. aot14n50fd.pdf Size:232K _aosemi

14N50
14N50

AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.47Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and

1.11. aow14n50.pdf Size:323K _aosemi

14N50
14N50

AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS The AOW14N50 & AOWF14N50 have been fabricated 600V@150℃ using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V) designed to deliver high levels of performance and < 0.38Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

1.12. aotf14n50.pdf Size:258K _aosemi

14N50
14N50

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.38Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

1.13. aot14n50.pdf Size:258K _aosemi

14N50
14N50

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.38Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

1.14. aob14n50.pdf Size:258K _aosemi

14N50
14N50

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.38Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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