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1N50Z Spec and Replacement


   Type Designator: 1N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-252 TO-92

 1N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

1N50Z Specs

 ..1. Size:185K  utc
1n50z.pdf pdf_icon

1N50Z

UNISONIC TECHNOLOGIES CO., LTD 1N50Z Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy puls... See More ⇒

 0.1. Size:144K  onsemi
ndf11n50z.pdf pdf_icon

1N50Z

NDF11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(ON) (MAX) @ 4.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 500 V Compliant 0.52 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol NDF Unit D (... See More ⇒

Detailed specifications: 26N50 , UF830 , UF830Z , UF840 , UK3568 , UF450 , UF460 , 1N50 , IRF4905 , 2N50 , 3N50 , 3N50Z , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 .

Keywords - 1N50Z MOSFET specs

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