All MOSFET. 1N50Z Datasheet

 

1N50Z Datasheet and Replacement


   Type Designator: 1N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-252 TO-92
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1N50Z Datasheet (PDF)

 ..1. Size:185K  utc
 1n50z.pdf pdf_icon

1N50Z

UNISONIC TECHNOLOGIES CO., LTD 1N50Z Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy puls

 0.1. Size:144K  onsemi
 ndf11n50z.pdf pdf_icon

1N50Z

NDF11N50ZN-Channel Power MOSFET500 V, 0.52 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 4.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS500 VCompliant 0.52 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol NDF UnitD (

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