1N50Z Datasheet and Replacement
Type Designator: 1N50Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
Package: TO-252 TO-92
1N50Z substitution
1N50Z Datasheet (PDF)
1n50z.pdf

UNISONIC TECHNOLOGIES CO., LTD 1N50Z Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy puls
ndf11n50z.pdf

NDF11N50ZN-Channel Power MOSFET500 V, 0.52 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 4.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS500 VCompliant 0.52 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol NDF UnitD (
Datasheet: 26N50 , UF830 , UF830Z , UF840 , UK3568 , UF450 , UF460 , 1N50 , IRF4905 , 2N50 , 3N50 , 3N50Z , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 .
History: 2SJ389L | IRF9410 | TMD8N25Z | 21N06 | HSS2307 | 8N60KL-TF1-T | KF19N20D
Keywords - 1N50Z MOSFET datasheet
1N50Z cross reference
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History: 2SJ389L | IRF9410 | TMD8N25Z | 21N06 | HSS2307 | 8N60KL-TF1-T | KF19N20D



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