All MOSFET. 1N50Z Datasheet


1N50Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N50Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 4.6 Ohm

Package: TO-252_TO-92

1N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N50Z Datasheet (PDF)

1.1. 1n50z.pdf Size:185K _utc


UNISONIC TECHNOLOGIES CO., LTD 1N50Z Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse i

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