All MOSFET. UF730 Datasheet

 

UF730 Datasheet and Replacement


   Type Designator: UF730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220 TO-220F TO-251 TO-252
 

 UF730 substitution

   - MOSFET ⓘ Cross-Reference Search

 

UF730 Datasheet (PDF)

 ..1. Size:337K  utc
 uf730.pdf pdf_icon

UF730

UNISONIC TECHNOLOGIES CO., LTD UF730 Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1TO-252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor 1drivers, relay drivers. TO-251 FEATURES * RDS(ON) = 1@V

Datasheet: 10N40 , 11N40 , 12N40 , 13N40 , 15N40 , 18N40 , 20N40 , 25N40 , P0903BDG , UF740 , UF3N25 , UF634 , 12N25 , 15N25 , 18N25 , UF2N30 , 10N30 .

History: IGT60R070D1 | AOT2142L

Keywords - UF730 MOSFET datasheet

 UF730 cross reference
 UF730 equivalent finder
 UF730 lookup
 UF730 substitution
 UF730 replacement

 

 
Back to Top

 


 
.