UF730 Datasheet and Replacement
Type Designator: UF730
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220 TO-220F TO-251 TO-252
UF730 substitution
UF730 Datasheet (PDF)
uf730.pdf
UNISONIC TECHNOLOGIES CO., LTD UF730 Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1TO-252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor 1drivers, relay drivers. TO-251 FEATURES * RDS(ON) = 1@V
Datasheet: 10N40 , 11N40 , 12N40 , 13N40 , 15N40 , 18N40 , 20N40 , 25N40 , RFP50N06 , UF740 , UF3N25 , UF634 , 12N25 , 15N25 , 18N25 , UF2N30 , 10N30 .
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