All MOSFET. UF730 Datasheet

 

UF730 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UF730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220 TO-220F TO-251 TO-252

 UF730 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UF730 Datasheet (PDF)

 ..1. Size:337K  utc
 uf730.pdf

UF730 UF730

UNISONIC TECHNOLOGIES CO., LTD UF730 Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1TO-252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor 1drivers, relay drivers. TO-251 FEATURES * RDS(ON) = 1@V

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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