All MOSFET. UF3N25 Datasheet

 

UF3N25 Datasheet and Replacement


   Type Designator: UF3N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO-251 SOT-223 TO-252
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UF3N25 Datasheet (PDF)

 ..1. Size:156K  utc
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UF3N25

UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1SOT-223 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge 1and superior switching performance. TO-252 FEATURES * RDS(ON)

Datasheet: 12N40 , 13N40 , 15N40 , 18N40 , 20N40 , 25N40 , UF730 , UF740 , IRF830 , UF634 , 12N25 , 15N25 , 18N25 , UF2N30 , 10N30 , 12N30 , UF3205 .

History: 2SJ473-01S | IRF7759L2TR1PBF

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