UF3N25 Datasheet and Replacement
Type Designator: UF3N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO-251 SOT-223 TO-252
UF3N25 substitution
UF3N25 Datasheet (PDF)
uf3n25.pdf

UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1SOT-223 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge 1and superior switching performance. TO-252 FEATURES * RDS(ON)
Datasheet: 12N40 , 13N40 , 15N40 , 18N40 , 20N40 , 25N40 , UF730 , UF740 , STP80NF70 , UF634 , 12N25 , 15N25 , 18N25 , UF2N30 , 10N30 , 12N30 , UF3205 .
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