UF634 Datasheet and Replacement
Type Designator: UF634
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-220 TO-252 TO-220F TO-220F1
UF634 substitution
UF634 Datasheet (PDF)
uf634.pdf

UNISONIC TECHNOLOGIES CO., LTD UF634 Power MOSFET ADVANCED POWER MOSFET DESCRIPTION The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on. FEATURES * RDS(ON)
ceuf634 cedf634.pdf

CEDF634/CEUF634N-Channel Enhancement Mode Field Effect TransistorFEATURES250V, 6.7A, RDS(ON) = 450m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESTO-252(D-PAK) STO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe
Datasheet: 13N40 , 15N40 , 18N40 , 20N40 , 25N40 , UF730 , UF740 , UF3N25 , 13N50 , 12N25 , 15N25 , 18N25 , UF2N30 , 10N30 , 12N30 , UF3205 , 2N7000Z .
History: LND2N65
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History: LND2N65



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