All MOSFET. UF2N30 Datasheet

 

UF2N30 Datasheet and Replacement


   Type Designator: UF2N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT-223
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UF2N30 Datasheet (PDF)

 ..1. Size:130K  utc
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UF2N30

UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * 2A, 300V, RDS(ON)

Datasheet: 25N40 , UF730 , UF740 , UF3N25 , UF634 , 12N25 , 15N25 , 18N25 , AON6380 , 10N30 , 12N30 , UF3205 , 2N7000Z , 2N7002LL , 2N7002Z , 2N7002ZT , UF3055 .

History: IRF7105PBF-1 | BSB280N15NZ3G | 12N65KG-TF1-T | 2SK2793 | R5016ANJ | ELM13401CA | DH150N12B

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