UF2N30 Specs and Replacement

Type Designator: UF2N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SOT-223

UF2N30 substitution

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UF2N30 datasheet

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 uf2n30.pdf pdf_icon

UF2N30

UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * 2A, 300V, RDS(ON)... See More ⇒

Detailed specifications: 25N40, UF730, UF740, UF3N25, UF634, 12N25, 15N25, 18N25, 18N50, 10N30, 12N30, UF3205, 2N7000Z, 2N7002LL, 2N7002Z, 2N7002ZT, UF3055

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