22N20 Datasheet and Replacement
Type Designator: 22N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-220 TO-220F
22N20 substitution
22N20 Datasheet (PDF)
22n20.pdf

UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology isspecialized in allowing a minimum on-state resistance and superior switching performance. It also
mtn22n20j3.pdf

Spec. No. : C840J3 Issued Date : 2012.07.02 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTN22N20J3 ID 22A86m VGS=10V, ID=11A RDSON(TYP) 93m VGS=4.5V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit
Datasheet: UF3055 , UTD3055 , 12N06 , 12N06Z , 15N06 , 12N10 , 15N20 , 19N10 , STP65NF06 , 25N06 , 25N10 , 30N06 , 50N06 , 60N06 , 60N08 , 6N10 , 70N06 .
History: HCS70R230S | R6024ENZ1 | 2N7002DSGP
Keywords - 22N20 MOSFET datasheet
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History: HCS70R230S | R6024ENZ1 | 2N7002DSGP



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