All MOSFET. 22N20 Datasheet


22N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: 22N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 156 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 300 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: TO-220_TO-220F

22N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

22N20 Datasheet (PDF)

1.1. 22n20.pdf Size:184K _utc


UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can

1.2. mtn22n20j3.pdf Size:280K _cystek


Spec. No. : C840J3 Issued Date : 2012.07.02 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTN22N20J3 ID 22A 86mΩ VGS=10V, ID=11A RDSON(TYP) 93mΩ VGS=4.5V, ID=5A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit


Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

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