22N20 Datasheet. Specs and Replacement
Type Designator: 22N20 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 220 pF
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22N20 substitution
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22N20 datasheet
22n20.pdf
UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also ... See More ⇒
mtn22n20j3.pdf
Spec. No. C840J3 Issued Date 2012.07.02 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTN22N20J3 ID 22A 86m VGS=10V, ID=11A RDSON(TYP) 93m VGS=4.5V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit ... See More ⇒
Detailed specifications: UF3055, UTD3055, 12N06, 12N06Z, 15N06, 12N10, 15N20, 19N10, AO4468, 25N06, 25N10, 30N06, 50N06, 60N06, 60N08, 6N10, 70N06
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