All MOSFET. UF4N20 Datasheet

 

UF4N20 Datasheet and Replacement


   Type Designator: UF4N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.2 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-252 SOT-223
 

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UF4N20 Datasheet (PDF)

 ..1. Size:157K  utc
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UF4N20

UNISONIC TECHNOLOGIES CO., LTD UF4N20 Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252The UTC UF4N20 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. 1 FEATURES SOT-223* RDS(ON)

Datasheet: 70N06 , 75N75 , 7N10 , 7N10Z , 80N08 , UF1010A , UF1010E , UF3710 , IRFZ44N , UF540 , UF630 , UF640 , UF6N15 , UF8010 , UFZ44 , URFP150 , UT12N10 .

History: AP90T06GP-HF | SQ3457EV | 3N80G-TF3-T | 2SK2859 | 2SK2816 | IRFP4232PBF

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