UF4N20 Specs and Replacement

Type Designator: UF4N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-252 SOT-223

UF4N20 substitution

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UF4N20 datasheet

 ..1. Size:157K  utc
 uf4n20.pdf pdf_icon

UF4N20

UNISONIC TECHNOLOGIES CO., LTD UF4N20 Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UF4N20 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. 1 FEATURES SOT-223 * RDS(ON)... See More ⇒

Detailed specifications: 70N06, 75N75, 7N10, 7N10Z, 80N08, UF1010A, UF1010E, UF3710, IRFZ44N, UF540, UF630, UF640, UF6N15, UF8010, UFZ44, URFP150, UT12N10

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