All MOSFET. UF6N15 Datasheet

 

UF6N15 Datasheet and Replacement


   Type Designator: UF6N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm
   Package: SOT-223
 

 UF6N15 substitution

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UF6N15 Datasheet (PDF)

 ..1. Size:128K  utc
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UF6N15

UNISONIC TECHNOLOGIES CO., LTD UF6N15 Preliminary Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF6N15 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * 6A, 150V, RDS(ON)

Datasheet: 80N08 , UF1010A , UF1010E , UF3710 , UF4N20 , UF540 , UF630 , UF640 , IRF840 , UF8010 , UFZ44 , URFP150 , UT12N10 , UT2N10 , 12P10 , 7P20 , UF9640 .

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