UF6N15 Specs and Replacement

Type Designator: UF6N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm

Package: SOT-223

UF6N15 substitution

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UF6N15 datasheet

 ..1. Size:128K  utc
 uf6n15.pdf pdf_icon

UF6N15

UNISONIC TECHNOLOGIES CO., LTD UF6N15 Preliminary Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF6N15 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * 6A, 150V, RDS(ON)... See More ⇒

Detailed specifications: 80N08, UF1010A, UF1010E, UF3710, UF4N20, UF540, UF630, UF640, 20N60, UF8010, UFZ44, URFP150, UT12N10, UT2N10, 12P10, 7P20, UF9640

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