UF8010 Specs and Replacement

Type Designator: UF8010

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 370 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-263 TO-220 TO-220F

UF8010 substitution

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UF8010 datasheet

 ..1. Size:251K  utc
 uf8010.pdf pdf_icon

UF8010

UNISONIC TECHNOLOGIES CO., LTD UF8010 Power MOSFET 80A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF8010 uses advanced technology to provide excellent RDS(ON), fast switching speed, low gate charge, and excellent efficiency. This device is suitable for high frequency DC-DC converters, UPS and motor control. FEATURES * RDS(ON) 12m (Typ.) * Lower gate-drain... See More ⇒

Detailed specifications: UF1010A, UF1010E, UF3710, UF4N20, UF540, UF630, UF640, UF6N15, IRF540N, UFZ44, URFP150, UT12N10, UT2N10, 12P10, 7P20, UF9640, UF9Z24

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