All MOSFET. UF8010 Datasheet

 

UF8010 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UF8010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 399 nC
   trⓘ - Rise Time: 370 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-263 TO-220 TO-220F

 UF8010 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UF8010 Datasheet (PDF)

 ..1. Size:251K  utc
 uf8010.pdf

UF8010 UF8010

UNISONIC TECHNOLOGIES CO., LTD UF8010 Power MOSFET 80A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF8010 uses advanced technology to provide excellent RDS(ON), fast switching speed, low gate charge, and excellent efficiency. This device is suitable for high frequency DC-DC converters, UPS and motor control. FEATURES * RDS(ON) :12m (Typ.) * Lower gate-drain

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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