UT12N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT12N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 43 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO-251_TO-252
UT12N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT12N10 Datasheet (PDF)
1.1. ut12n10.pdf 
Size:145K _utc
UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 ? DESCRIPTION TO-251 The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it‘ s good at handing high power and current. 1 ? FEATURES TO-25
Datasheet: UF4N20 , UF540 , UF630 , UF640 , UF6N15 , UF8010 , UFZ44 , URFP150 , IRF540N , UT2N10 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , UTT120P06 , UTT12P10 .
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