All MOSFET. UT12N10 Datasheet

 

UT12N10 Datasheet and Replacement


   Type Designator: UT12N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-251 TO-252
 

 UT12N10 substitution

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UT12N10 Datasheet (PDF)

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UT12N10

UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-251The UTC UT12N10 is an N-channel mode Power FET using UTCs advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it s good at handing high power and current. 1 FEATURES

Datasheet: UF4N20 , UF540 , UF630 , UF640 , UF6N15 , UF8010 , UFZ44 , URFP150 , IRF640 , UT2N10 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , UTT120P06 , UTT12P10 .

History: NCE30H12 | BLP12N10GL-Q

Keywords - UT12N10 MOSFET datasheet

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