UT12N10 Specs and Replacement
Type Designator: UT12N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
UT12N10 substitution
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UT12N10 datasheet
ut12n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-251 The UTC UT12N10 is an N-channel mode Power FET using UTC s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it s good at handing high power and current. 1 FEATURES ... See More ⇒
Detailed specifications: UF4N20 , UF540 , UF630 , UF640 , UF6N15 , UF8010 , UFZ44 , URFP150 , IRFP460 , UT2N10 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , UTT120P06 , UTT12P10 .
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